Issued Patents All Time
Showing 26–42 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8993433 | Manufacturing method for forming a self aligned contact | Chieh-Te Chen, Hsuan-Hsu Chen, Feng-Yi Chang, Chih-Sen Huang, Ching-Wen Hung | 2015-03-31 |
| 8883648 | Manufacturing method of semiconductor structure | Ming-Da Hsieh, Hsuan-Hsu Chen | 2014-11-11 |
| 8828878 | Manufacturing method for dual damascene structure | Duan Quan Liao, Yikun Chen, Xiao Zhong Zhu, Ching Hwa Tey, Chen-Hua Tsai | 2014-09-09 |
| 8791013 | Pattern forming method | Shin-Chi Chen, Jiunn-Hsiung Liao, Guang-Yaw Hwang | 2014-07-29 |
| 8735295 | Method of manufacturing dual damascene structure | Chang-Hsiao Lee, Hsin-Yu Chen, Jiunn-Hsiung Liao, Shih-Chun Tsai | 2014-05-27 |
| 8592304 | Method for filling metal | Chang-Hsiao Lee, Jiunn-Hsiung Liao | 2013-11-26 |
| 8350246 | Structure of porous low-k layer and interconnect structure | Mei-Ling Chen, Kuo-Chih Lai, Su-Jen Sung, Chien-Chung Huang | 2013-01-08 |
| 8323877 | Patterning method and method for fabricating dual damascene opening | Ming-Da Hsieh, Jiunn-Hsiung Liao | 2012-12-04 |
| 8298935 | Dual damascene process | Shin-Chi Chen, Jiunn-Hsiung Liao, Guang-Yaw Hwang | 2012-10-30 |
| 8282842 | Cleaning method following opening etch | Chieh-Ju Wang, Jyh-Cherng Yau, Jiunn-Hsiung Liao | 2012-10-09 |
| 8277674 | Method of removing post-etch residues | Chang-Hsiao Lee, Jiunn-Hsiung Liao | 2012-10-02 |
| 8137472 | Semiconductor process | Chang-Hsiao Lee, Shih-Fang Tzou, Ming-Da Hsieh, Jyh-Cherng Yau, Jiunn-Hsiung Liao | 2012-03-20 |
| 8080877 | Damascene interconnection structure and dual damascene process thereof | Chun-Jen Huang, Jyh-Cherng Yau, Jiunn-Hsiung Liao | 2011-12-20 |
| 7977244 | Semiconductor manufacturing process | Chun-Jen Huang, Jyh-Cherng Yau, Jiunn-Hsiung Liao | 2011-07-12 |
| 7947565 | Forming method of porous low-k layer and interconnect process | Mei-Ling Chen, Kuo-Chih Lai, Su-Jen Sung, Chien-Chung Huang | 2011-05-24 |
| 7767578 | Damascene interconnection structure and dual damascene process thereof | Chun-Jen Huang, Jyh-Cherng Yau, Jiunn-Hsiung Liao | 2010-08-03 |
| 7378343 | Dual damascence process utilizing teos-based silicon oxide cap layer having reduced carbon content | Jei-Ming Chen, Miao-Chun Lin, Kuo-Chih Lai, Mei-Ling Chen, Cheng-Ming Weng +1 more | 2008-05-27 |