HK

Hisaki Kato

TC Toyoda Gosei Co.: 28 patents #43 of 2,296Top 2%
NU Nagoya University: 10 patents #3 of 109Top 3%
HK Hamamatsu Photonics K.K.: 9 patents #234 of 1,436Top 20%
JT Japan Science And Technology: 7 patents #6 of 836Top 1%
UN Unknown: 4 patents #4,220 of 83,584Top 6%
TL Toyota Central R&D Labs: 4 patents #276 of 1,657Top 20%
RJ Research Development Corporation Of Japan: 3 patents #41 of 402Top 15%
DI Denso Wave Incorporated: 2 patents #73 of 250Top 30%
JA Japan Science And Technology Agency: 1 patents #756 of 2,171Top 35%
📍 Kita Nagoya, JP: #1 of 63 inventorsTop 2%
Overall (All Time): #83,397 of 4,157,543Top 3%
39
Patents All Time

Issued Patents All Time

Showing 26–39 of 39 patents

Patent #TitleCo-InventorsDate
6265726 Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity Katsuhide Manabe, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more 2001-07-24
6249012 Light emitting semiconductor device using gallium nitride group compound Katsuhide Manabe, Akira Mabuchi, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more 2001-06-19
6005258 Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities Katsuhide Manabe, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more 1999-12-21
5905276 Light emitting semiconductor device using nitrogen-Group III compound Katsuhide Manabe, Masahiro Kotaki, Michinari Sassa, Isamu Akasaki, Hiroshi Amano 1999-05-18
5886341 Photodetection tube with a slidably adapted cathode substrate Naohisa Tateishi, Katurou Hikita 1999-03-23
5733796 Light-emitting semiconductor device using gallium nitride group compound Katsuhide Manabe, Akira Mabuchi, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more 1998-03-31
5719390 Photodetection tube with a lid and cathode holding member in thermal contact with a cooler Naohisa Tateishi, Katurou Hikita 1998-02-17
5650641 Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device Michinari Sassa, Masayoshi Koike, Katsuhide Manabe, Norikatsu Koide, Naoki Shibata +2 more 1997-07-22
5620557 Sapphireless group III nitride semiconductor and method for making same Katsuhide Manabe, Masayoshi Koike, Norikatsu Koide, Isamu Akasaki, Hiroshi Amano 1997-04-15
5604763 Group III nitride compound semiconductor laser diode and method for producing same Norikatsu Koide, Masayoshi Koike, Isamu Akasaki, Hiroshi Amano 1997-02-18
5481158 Electron multiplier with improved dynode geometry for reduced crosstalk Suenori Kimura, Kiyoshi Nakatsugawa, Tsuguo Uchino, Itsuo Ozawa, Hiroyuki Onda 1996-01-02
5278433 Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer Katsuhide Manabe, Akira Mabuchi, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more 1994-01-11
5122845 Substrate for growing gallium nitride compound-semiconductor device and light emitting diode Katsuhide Manabe, Isamu Akasaki, Kazumasa Hiramatsu, Hiroshi Amano 1992-06-16
5007718 Electrochromic elements and methods of manufacturing and driving the same Jun Minoura, Shigeyuki Takahahi, Toshiyasu Ito, Takaaki Mori, Mamoru Kato +2 more 1991-04-16