Issued Patents All Time
Showing 1–25 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11462659 | Semiconductor light emitting device and manufacturing method of semiconductor light emitting device | Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Lu Weifang, Naoki Sone +3 more | 2022-10-04 |
| 11146040 | Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element | Tetsuya Takeuchi, Kazuki Kiyohara, Masaru Takizawa, Ji-Hao Liang | 2021-10-12 |
| 10833223 | Group III nitride semiconductor light-emitting device and production method therefor | Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Hisanori Kojima, Toshiki Yasuda +1 more | 2020-11-10 |
| 10593831 | Nitride semiconductor multilayer film reflector and light-emitting device using the same | Tetsuya Takeuchi, Motoaki Iwaya | 2020-03-17 |
| 10411438 | Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element | Tetsuya Takeuchi, Takanobu Akagi | 2019-09-10 |
| 10116120 | Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element | Tetsuya Takeuchi, Shinichi Tanaka, Kazufumi Tanaka | 2018-10-30 |
| 9847449 | Nitride semiconductor light-emitting device with periodic gain active layers | Kenjo Matsui, Tetsuya Takeuchi, Motoaki Iwaya, Takanobu Akagi, Sho Iwayama | 2017-12-19 |
| 9716209 | Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device | Tetsuya Takeuchi, Yuka Kuwano, Motoaki Iwaya | 2017-07-25 |
| 9666753 | Nitride semiconductor light emitting device and method of fabricating the same | Tetsuya Takeuchi, Daisuke Komori, Kaku Takarabe, Motoaki Iwaya | 2017-05-30 |
| 9437775 | Nitride semiconductor light-emitting device | Tetsuya Takeuchi, Motoaki Iwaya | 2016-09-06 |
| 9099597 | Light emitting diode element with porous SiC emitting by donor acceptor pair | Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Takuya Nishimura, Fumiharu Teramae +1 more | 2015-08-04 |
| 9029174 | Method for manufacturing semiconductor device | Motoaki Iwaya, Hiroshi Amano | 2015-05-12 |
| 8941136 | Semiconductor light emitting element | Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Toshiyuki Kondo, Fumiharu Teramae +2 more | 2015-01-27 |
| 7985964 | Light-emitting semiconductor device | Satoshi Kamiyama, Hiroshi Amano, Motoaki Iwaya | 2011-07-26 |
| 7855385 | SiC crystal and semiconductor device | Satoshi Kamiyama, Hiroshi Amano, Motoaki Iwaya, Masahiro Yoshimoto, Hiroyuki Kinoshita | 2010-12-21 |
| 7756189 | Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element | Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano | 2010-07-13 |
| 7732826 | Semiconductor and method of semiconductor fabrication | Satoshi Kamiyama, Hiroshi Amano, Motoaki Iwaya, Hiroyuki Kinoshita | 2010-06-08 |
| 7612381 | Method for fabricating a semiconductor device and semiconductor device | Satoshi Kamiyama, Hiroshi Amano, Motoaki Iwaya, Hideki Kasugai | 2009-11-03 |
| 7361948 | Filter function-equipped optical sensor and flame sensor | Akira Hirano, Satoshi Kamiyama, Hiroshi Amano | 2008-04-22 |
| 7297989 | Diboride single crystal substrate, semiconductor device using this and its manufacturing method | Shigeki Otani, Hiroyuki Kinoshita, Hiroyuki Matsunami, Jun Suda, Hiroshi Amano +1 more | 2007-11-20 |
| 7183578 | Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus | Hiroshi Amano, Satoshi Kamiyama, Takanori Yasuda, Toshiya Matsuda | 2007-02-27 |
| 6984536 | Method for manufacturing a gallium nitride group compound semiconductor | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide +2 more | 2006-01-10 |
| 6962828 | Methods for manufacturing a light-emitting device | Norikatsu Koide, Masayoshi Koike, Shiro Yamasaki, Hiroshi Amano | 2005-11-08 |
| 6849472 | Nitride semiconductor device with reduced polarization fields | Michael R. Krames, Tetsuya Takeuchi, Norihide Yamada, Hiroshi Amano | 2005-02-01 |
| 6830992 | Method for manufacturing a gallium nitride group compound semiconductor | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide +2 more | 2004-12-14 |