IA

Isamu Akasaki

TC Toyoda Gosei Co.: 28 patents #43 of 2,296Top 2%
UN Unknown: 22 patents #172 of 83,584Top 1%
MU Meijo University: 15 patents #1 of 103Top 1%
NU Nagoya University: 13 patents #1 of 109Top 1%
JT Japan Science And Technology: 8 patents #3 of 836Top 1%
Pioneer Electronic: 6 patents #303 of 1,840Top 20%
Sumitomo Electric Industries: 5 patents #5,365 of 21,551Top 25%
RJ Research Development Corporation Of Japan: 5 patents #17 of 402Top 5%
SC Stanley Electric Co.: 4 patents #170 of 1,072Top 20%
LU Lumileds Lighting Us: 4 patents #24 of 139Top 20%
AT Agilent Technologies: 3 patents #759 of 3,411Top 25%
TL Toyota Central R&D Labs: 3 patents #379 of 1,657Top 25%
PA Panasonic: 2 patents #9,678 of 21,108Top 50%
Kyocera: 2 patents #1,365 of 3,732Top 40%
RF Research Development Foundation: 1 patents #152 of 362Top 45%
SC Soko Kagaku Co.: 1 patents #16 of 21Top 80%
NS National Institute For Materials Science: 1 patents #361 of 901Top 45%
KC Koito Manufacturing Co.: 1 patents #610 of 1,047Top 60%
JA Japan Science And Technology Agency: 1 patents #756 of 2,171Top 35%
EL El-Seed: 1 patents #9 of 17Top 55%
Overall (All Time): #33,836 of 4,157,543Top 1%
65
Patents All Time

Issued Patents All Time

Showing 51–65 of 65 patents

Patent #TitleCo-InventorsDate
5389571 Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer Tetsuya Takeuchi, Hiroshi Amano, Atsushi Watanabe, Katsuhide Manabe 1995-02-14
5370738 Compound semiconductor vapor phase epitaxial device Atsushi Watanabe, Hiroshi Amano, Kazumasa Hiramatsu 1994-12-06
5281830 Light-emitting semiconductor device using gallium nitride group compound Masahiro Kotaki, Hiroshi Amano 1994-01-25
5278433 Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide +2 more 1994-01-11
5247533 Gallium nitride group compound semiconductor laser diode Nobuo Okazaki, Katsuhide Manabe, Hiroshi Amano 1993-09-21
5239188 Gallium nitride base semiconductor device Tetsuya Takeuchi, Hiroshi Amano, Atsushi Watanabe, Katsuhide Manabe 1993-08-24
5218216 Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same Katsuhide Manabe, Nobuo Okazaki, Kazumasa Hiramatsu, Hiroshi Amano 1993-06-08
5122845 Substrate for growing gallium nitride compound-semiconductor device and light emitting diode Katsuhide Manabe, Hisaki Kato, Kazumasa Hiramatsu, Hiroshi Amano 1992-06-16
4855249 Process for growing III-V compound semiconductors on sapphire using a buffer layer Nobuhiko Sawaki 1989-08-08
4476620 Method of making a gallium nitride light-emitting diode Yoshimasa Ohki, Yukio Toyoda, Hiroyuki Kobayashi 1984-10-16
4473938 Method for making a GaN electroluminescent semiconductor device utilizing epitaxial deposition Hiroyuki Kobayashi, Yoshimasa Ohki, Yukio Toyoda 1984-10-02
4408217 GaN Electroluminescent semiconductor device and method for making the same Hiroyuki Kobayashi, Yoshimasa Ohki, Yukio Toyoda 1983-10-04
4396929 Gallium nitride light-emitting element and method of manufacturing the same Yoshimasa Ohki, Yukio Toyoda, Hiroyuki Kobayashi 1983-08-02
4325070 Recording head for facsimile receivers Masaaki Ohsima, Nobuhide Matsuda, Michio Matsuki, Yoshio Tsukamoto, Hiromichi Kagi +1 more 1982-04-13
4319259 Electroluminescent element Masaaki Ohsima 1982-03-09