Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7867800 | Light-emitting semiconductor device using group III nitrogen compound | Katsuhide Manabe, Hisaki Kato, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 2011-01-11 |
| 7332366 | Light-emitting semiconductor device using group III nitrogen compound | Katsuhide Manabe, Hisaki Kato, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 2008-02-19 |
| 7138286 | Light-emitting semiconductor device using group III nitrogen compound | Katsuhide Manabe, Hisaki Kato, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 2006-11-21 |
| 7001790 | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity | Katsuhide Manabe, Hisaki Kato, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 2006-02-21 |
| 6984536 | Method for manufacturing a gallium nitride group compound semiconductor | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Norikatsu Koide, Shiro Yamazaki +2 more | 2006-01-10 |
| 6830992 | Method for manufacturing a gallium nitride group compound semiconductor | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Norikatsu Koide, Shiro Yamazaki +2 more | 2004-12-14 |
| 6607595 | Method for producing a light-emitting semiconductor device | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Norikatsu Koide, Shiro Yamazaki +2 more | 2003-08-19 |
| 6593599 | Light-emitting semiconductor device using gallium nitride group compound | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Norikatsu Koide, Shiro Yamazaki +2 more | 2003-07-15 |
| 6472689 | Light emitting device | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Norikatsu Koide, Shiro Yamazaki +2 more | 2002-10-29 |
| 6472690 | Gallium nitride group compound semiconductor | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Norikatsu Koide, Shiro Yamazaki +2 more | 2002-10-29 |
| 6362017 | Light-emitting semiconductor device using gallium nitride group compound | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Norikatsu Koide, Shiro Yamazaki +2 more | 2002-03-26 |
| 6265726 | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity | Katsuhide Manabe, Hisaki Kato, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 2001-07-24 |
| 6249012 | Light emitting semiconductor device using gallium nitride group compound | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Norikatsu Koide, Shiro Yamazaki +2 more | 2001-06-19 |
| 6005258 | Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities | Katsuhide Manabe, Hisaki Kato, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 1999-12-21 |
| 5905276 | Light emitting semiconductor device using nitrogen-Group III compound | Katsuhide Manabe, Masahiro Kotaki, Hisaki Kato, Isamu Akasaki, Hiroshi Amano | 1999-05-18 |
| 5862167 | Light-emitting semiconductor device using gallium nitride compound | Norikatsu Koide, Shiro Yamazaki, Junichi Umezaki, Naoki Shibata, Masayoshi Koike +2 more | 1999-01-19 |
| 5753939 | Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed | Naoki Shibata, Shinya Asami, Masayoshi Koike, Junichi Umezaki, Takahiro Kozawa | 1998-05-19 |
| 5733796 | Light-emitting semiconductor device using gallium nitride group compound | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Norikatsu Koide, Shiro Yamazaki +2 more | 1998-03-31 |
| 5652438 | Light-emitting semiconductor device using group III nitride compound | Makoto Tamaki, Masayoshi Koike, Naoki Shibata, Masami Yamada, Takahide Oshio | 1997-07-29 |
| 5650641 | Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device | Masayoshi Koike, Katsuhide Manabe, Norikatsu Koide, Hisaki Kato, Naoki Shibata +2 more | 1997-07-22 |
| 5627109 | Method of manufacturing a semiconductor device that uses a sapphire substrate | Norikatsu Koide | 1997-05-06 |
| 5278433 | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer | Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Norikatsu Koide, Shiro Yamazaki +2 more | 1994-01-11 |