JU

Junichi Umezaki

TC Toyoda Gosei Co.: 9 patents #257 of 2,296Top 15%
RJ Research Development Corporation Of Japan: 2 patents #79 of 402Top 20%
UN Unknown: 2 patents #12,644 of 83,584Top 20%
Overall (All Time): #524,063 of 4,157,543Top 15%
10
Patents All Time

Issued Patents All Time

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDate
6821800 Semiconductor light-emitting device and manufacturing method thereof Norikatsu Koide, Shinya Asami, Masayoshi Koike, Shiro Yamasaki, Seiji Nagai 2004-11-23
6541293 Semiconductor light-emitting device and manufacturing method thereof Norikatsu Koide, Shinya Asami, Masayoshi Koike, Shiro Yamasaki, Seiji Nagai 2003-04-01
6420733 Semiconductor light-emitting device and manufacturing method thereof Norikatsu Koide, Shinya Asami, Masayoshi Koike, Shiro Yamasaki, Seiji Nagai 2002-07-16
6326236 Semiconductor light-emitting device and manufacturing method thereof Norikatsu Koide, Shinya Asami, Masayoshi Koike, Shiro Yamasaki, Seiji Nagai 2001-12-04
6121127 Methods and devices related to electrodes for p-type group III nitride compound semiconductors Naoki Shibata, Makoto Asai, Toshiya Uemura, Takahiro Kozawa, Tomohiko Mori +1 more 2000-09-19
6040588 Semiconductor light-emitting device Norikatsu Koide, Shinya Asami, Masayoshi Koike, Shiro Yamasaki, Seiji Nagai 2000-03-21
6008539 Electrodes for p-type group III nitride compound semiconductors Naoki Shibata, Makoto Asai, Toshiya Uemura, Takahiro Kozawa, Tomohiko Mori +1 more 1999-12-28
5862167 Light-emitting semiconductor device using gallium nitride compound Michinari Sassa, Norikatsu Koide, Shiro Yamazaki, Naoki Shibata, Masayoshi Koike +2 more 1999-01-19
5753939 Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed Michinari Sassa, Naoki Shibata, Shinya Asami, Masayoshi Koike, Takahiro Kozawa 1998-05-19
5587593 Light-emitting semiconductor device using group III nitrogen compound Norikatsu Koide, Shiro Yamazaki, Shinya Asami 1996-12-24