Issued Patents All Time
Showing 1–25 of 72 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11280024 | Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphere | Takayuki Sato, Miki Moriyama, Yasuhide Yakushi | 2022-03-22 |
| 10693032 | Method for producing Group III nitride semiconductor, seed substrate and Group III nitride semiconductor crystal | Miki Moriyama, Shohei Kumegawa | 2020-06-23 |
| 10329687 | Method for producing Group III nitride semiconductor including growing Group III nitride semiconductor through flux method | Miki Moriyama, Yasuhide Yakushi | 2019-06-25 |
| 9567693 | Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrate | Seiji Nagai, Miki Moriyama, Shohei Kumegawa | 2017-02-14 |
| 9388506 | Semiconductor crystal removal apparatus and production method for semiconductor crystal | Seiji Nagai, Miki Moriyama | 2016-07-12 |
| 9263258 | Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor device | Seiji Nagai, Takayuki Sato, Yasuhide Yakushi, Koji Okuno, Koichi Goshonoo | 2016-02-16 |
| 9028611 | Method for producing group III nitride semiconductor | — | 2015-05-12 |
| 8962456 | Group III nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device | Miki Moriyama | 2015-02-24 |
| 8507364 | N-type group III nitride-based compound semiconductor and production method therefor | Seiji Nagai, Yasuhide Yakushi, Takayuki Sato, Makoto Iwai, Katsuhiro Imai +2 more | 2013-08-13 |
| 8361222 | Method for producing group III nitride-based compound semiconductor | Seiji Nagai, Takayuki Sato, Katsuhiro Imai, Makoto Iwai, Takatomo Sasaki +2 more | 2013-01-29 |
| 8349079 | Apparatus for manufacturing group III nitride semiconductor | Koji Hirata | 2013-01-08 |
| 8343239 | Group III nitride semiconductor manufacturing system | Koji Hirata | 2013-01-01 |
| 8227324 | Method for producing group III nitride-based compound semiconductor crystal | Makoto Iwai, Takanao Shimodaira, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura | 2012-07-24 |
| 8216365 | Method for producing a semiconductor crystal | Seiji Nagai, Takayuki Sato, Katsuhiro Imai, Makoto Iwai, Takatomo Sasaki +2 more | 2012-07-10 |
| 8123856 | Method and apparatus for producing group III nitride based compound semiconductor | Makoto Iwai, Takanao Shimodaira, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura | 2012-02-28 |
| 8084281 | Semiconductor substrate, electronic device, optical device, and production methods therefor | Naoki Shibata, Koji Hirata, Katsuhiro Imai, Makoto Iwai, Takatomo Sasaki +2 more | 2011-12-27 |
| 7867800 | Light-emitting semiconductor device using group III nitrogen compound | Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Makoto Asai, Naoki Shibata +1 more | 2011-01-11 |
| 7708833 | Crystal growing apparatus | Koji Hirata, Takayuki Sato, Seiji Nagai, Katsuhiro Imai, Makoto Iwai +4 more | 2010-05-04 |
| 7459023 | Method for producing semiconductor crystal | Koji Hirata, Katsuhiro Imai, Makoto Iwai, Takatomo Sasaki, Yusuke Mori +3 more | 2008-12-02 |
| 7332366 | Light-emitting semiconductor device using group III nitrogen compound | Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Makoto Asai, Naoki Shibata +1 more | 2008-02-19 |
| 7138286 | Light-emitting semiconductor device using group III nitrogen compound | Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Makoto Asai, Naoki Shibata +1 more | 2006-11-21 |
| 7112243 | Method for producing Group III nitride compound semiconductor | Masayoshi Koike | 2006-09-26 |
| 7084421 | Light-emitting device using group III nitride group compound semiconductor | Masayoshi Koike, Akira Kojima | 2006-08-01 |
| 7052979 | Production method for semiconductor crystal and semiconductor luminous element | Seiji Nagai, Kazuyoshi Tomita, Yuta Tezen, Toshio Hiramatsu | 2006-05-30 |
| 7001790 | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity | Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Makoto Asai, Naoki Shibata +1 more | 2006-02-21 |