Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11611017 | Group 13 element nitride layer, free-standing substrate and functional element | Takayuki Hirao, Hirokazu Nakanishi, Mikiya Ichimura, Masahiro Sakai, Takashi Yoshino | 2023-03-21 |
| 11555257 | Group 13 element nitride layer, free-standing substrate and functional element | Takayuki Hirao, Hirokazu Nakanishi, Mikiya Ichimura, Masahiro Sakai, Takashi Yoshino | 2023-01-17 |
| 11309455 | Group 13 element nitride layer, free-standing substrate and functional element | Takayuki Hirao, Hirokazu Nakanishi, Mikiya Ichimura, Masahiro Sakai, Takashi Yoshino | 2022-04-19 |
| 11088299 | Group 13 element nitride layer, free-standing substrate and functional element | Takayuki Hirao, Hirokazu Nakanishi, Mikiya Ichimura, Masahiro Sakai, Takashi Yoshino | 2021-08-10 |
| 11035055 | Group 13 nitride layer, composite substrate, and functional element | Yoshinori Isoda, Suguru Noguchi, Tetsuya Uchikawa, Takayuki Hirao, Katsuhiro Imai | 2021-06-15 |
| 11011678 | Group 13 element nitride layer, free-standing substrate and functional element | Takayuki Hirao, Hirokazu Nakanishi, Mikiya Ichimura, Masahiro Sakai, Takashi Yoshino | 2021-05-18 |
| 10138570 | System and method for producing group 13 nitride crystals comprised of growth vessels stacked within inner vessels placed over support tables with a central rotating shaft and revolving shafts attached to the support tables | Takashi Yoshino, Katsuhiro Imai, Takashi Wada | 2018-11-27 |
| 10041186 | Method for producing nitride crystal | Katsuhiro Imai, Makoto Iwai, Masahiro Sakai, Shuhei Higashihara, Takayuki Hirao | 2018-08-07 |
| 9960316 | Method for separating group 13 element nitride layer, and composite substrate | Katsuhiro Imai, Makoto Iwai | 2018-05-01 |
| 9677192 | Group 3B nitride crystal substrate | Katsuhiro Imai, Makoto Iwai, Takayuki Hirao | 2017-06-13 |
| 9290861 | Group 13 nitride crystal with stepped surface | Takayuki Hirao, Katsuhiro Imai | 2016-03-22 |
| 9017479 | Nitride single crystal manufacturing apparatus | Makoto Iwai, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Shiro Yamasaki | 2015-04-28 |
| 8999059 | Process for producing a nitride single crystal and apparatus therefor | Katsuhiro Imai, Makoto Iwai, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura | 2015-04-07 |
| 8795431 | Method for producing gallium nitride layer and seed crystal substrate used in same | Katsuhiro Imai, Makota Iwai, Masahiro Sakai, Shuhei Higashihara, Takayuki Hirao | 2014-08-05 |
| 8729672 | Method for growing group 13 nitride crystal and group 13 nitride crystal | Takayuki Hirao, Katsuhiro Imai | 2014-05-20 |
| 8657955 | Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal | Makoto Iwai, Yoshihiko Yamamura, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura +1 more | 2014-02-25 |
| 8440017 | Method for growing group 13 nitride crystal and group 13 nitride crystal | Takayuki Hirao, Katsuhiro Imai | 2013-05-14 |
| 8231729 | Apparatus for producing nitride single crystal | Makoto Iwai, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Shiro Yamasaki | 2012-07-31 |
| 8227324 | Method for producing group III nitride-based compound semiconductor crystal | Shiro Yamazaki, Makoto Iwai, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura | 2012-07-24 |
| 8123856 | Method and apparatus for producing group III nitride based compound semiconductor | Shiro Yamazaki, Makoto Iwai, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura | 2012-02-28 |
| 7842133 | Single crystal growing method | Makoto Iwai, Shuhei Higashihara, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura +2 more | 2010-11-30 |