Issued Patents All Time
Showing 1–25 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7867800 | Light-emitting semiconductor device using group III nitrogen compound | Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 2011-01-11 |
| 7332366 | Light-emitting semiconductor device using group III nitrogen compound | Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 2008-02-19 |
| 7294391 | Contamination resistant fiber sheet | Masayuki Suzuki, Toshikazu Suzuki, Eigo Nakajima | 2007-11-13 |
| 7138286 | Light-emitting semiconductor device using group III nitrogen compound | Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 2006-11-21 |
| 7001790 | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity | Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 2006-02-21 |
| 6984536 | Method for manufacturing a gallium nitride group compound semiconductor | Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more | 2006-01-10 |
| 6830992 | Method for manufacturing a gallium nitride group compound semiconductor | Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more | 2004-12-14 |
| 6607595 | Method for producing a light-emitting semiconductor device | Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more | 2003-08-19 |
| 6593599 | Light-emitting semiconductor device using gallium nitride group compound | Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more | 2003-07-15 |
| 6472690 | Gallium nitride group compound semiconductor | Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more | 2002-10-29 |
| 6472689 | Light emitting device | Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more | 2002-10-29 |
| 6362017 | Light-emitting semiconductor device using gallium nitride group compound | Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more | 2002-03-26 |
| 6265726 | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity | Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 2001-07-24 |
| 6249012 | Light emitting semiconductor device using gallium nitride group compound | Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more | 2001-06-19 |
| RE36747 | Light-emitting device of gallium nitride compound semiconductor | Masahiro Kotaki, Makoto Tamaki, Masafumi Hashimoto | 2000-06-27 |
| 6005258 | Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities | Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata +1 more | 1999-12-21 |
| 5905276 | Light emitting semiconductor device using nitrogen-Group III compound | Masahiro Kotaki, Hisaki Kato, Michinari Sassa, Isamu Akasaki, Hiroshi Amano | 1999-05-18 |
| 5733796 | Light-emitting semiconductor device using gallium nitride group compound | Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more | 1998-03-31 |
| 5650641 | Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device | Michinari Sassa, Masayoshi Koike, Norikatsu Koide, Hisaki Kato, Naoki Shibata +2 more | 1997-07-22 |
| 5620557 | Sapphireless group III nitride semiconductor and method for making same | Masayoshi Koike, Hisaki Kato, Norikatsu Koide, Isamu Akasaki, Hiroshi Amano | 1997-04-15 |
| 5583879 | Gallum nitride group compound semiconductor laser diode | Shiro Yamazaki, Norikatsu Koide, Isamu Akasaki, Hiroshi Amano | 1996-12-10 |
| 5496766 | Method for producing a luminous element of III-group nitride | Hiroshi Amano, Isamu Akasaki, Toshiyuki Tanaka, Teruo Tohma | 1996-03-05 |
| 5408120 | Light-emitting device of gallium nitride compound semiconductor | Masahiro Kotaki, Makoto Tamaki, Masafumi Hashimoto | 1995-04-18 |
| 5389571 | Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer | Tetsuya Takeuchi, Hiroshi Amano, Isamu Akasaki, Atsushi Watanabe | 1995-02-14 |
| 5278433 | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer | Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki +2 more | 1994-01-11 |