Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8053811 | Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element | Hideto Miyake, Yoshihiko Tsuchida, Yoshinobu Ono, Naohiro Nishikawa | 2011-11-08 |
| 7399687 | Substrate of gallium nitride single crystal and process for producing the same | Hideto Miyake, Shinya Bohyama, Takayoshi Maeda, Yoshinobu Ono | 2008-07-15 |
| 6946308 | Method of manufacturing III-V group compound semiconductor | Hideto Miyake, Shinya Bohyama, Takayoshi Maeda, Yasushi Iyechika | 2005-09-20 |
| 6844574 | III-V compound semiconductor | Hideto Miyake, Takayoshi Maeda, Yasushi Iyechika | 2005-01-18 |
| 6756246 | Method for fabricating III-V group compound semiconductor | Hideto Miyake, Shinya Bohyama, Takayoshi Maeda, Yasushi Iyechika | 2004-06-29 |
| 6734515 | Semiconductor light receiving element | Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi, Masahiro Koto, Yutaka Hamamura +1 more | 2004-05-11 |
| 6503610 | Group III-V compound semiconductor and method of producing the same | Hideto Miyake, Takayoshi Maeda, Yasushi Iyechika | 2003-01-07 |
| 6225650 | GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof | Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi, Keiji Miyashita, Nobuhiko Sawaki +2 more | 2001-05-01 |
| 5846844 | Method for producing group III nitride compound semiconductor substrates using ZnO release layers | Isamu Akasaki, Hiroshi Amano, Theeradetch Detchprohm | 1998-12-08 |
| 5810925 | GaN single crystal | Kazuyuki Tadatomo, Shinichi Watabe, Hiroaki Okagawa | 1998-09-22 |
| 5770887 | Gan single crystal | Kazuyuki Tadatomo, Shinichi Watabe, Hiroaki Okagawa | 1998-06-23 |
| 5370738 | Compound semiconductor vapor phase epitaxial device | Atsushi Watanabe, Hiroshi Amano, Isamu Akasaki | 1994-12-06 |
| 5218216 | Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same | Katsuhide Manabe, Nobuo Okazaki, Isamu Akasaki, Hiroshi Amano | 1993-06-08 |
| 5122845 | Substrate for growing gallium nitride compound-semiconductor device and light emitting diode | Katsuhide Manabe, Hisaki Kato, Isamu Akasaki, Hiroshi Amano | 1992-06-16 |
| 4911102 | Process of vapor growth of gallium nitride and its apparatus | Katsuhide Manabe, Nobuo Okazaki, Isamu Akazaki, Hiroshi Amano | 1990-03-27 |