Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9293647 | Nitride semiconductor light-emitting device and method of manufacturing the same | Hiroyuki Kashihara, Narihito Okada, Haruhisa Takiguchi | 2016-03-22 |
| 8384111 | Method for forming sapphire substrate and semiconductor device | Narihito Okada | 2013-02-26 |
| 7589001 | Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method | Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto | 2009-09-15 |
| 7504324 | Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method | Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto | 2009-03-17 |
| 7179667 | Semiconductor base material and method of manufacturing the material | Hiroaki Okagawa, Yoichiro Ouchi, Takashi Tsunekawa | 2007-02-20 |
| 7115486 | Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method | Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto | 2006-10-03 |
| 7053420 | GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof | Hiroaki Okagawa, Yoichiro Ouchi, Takashi Tsunekawa | 2006-05-30 |
| 6940098 | Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method | Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto | 2005-09-06 |
| 6794210 | Method for growing GaN compound semiconductor crystal and semiconductor substrate | Yoichiro Ouchi, Hiroaki Okagawa, Masahiro Koto | 2004-09-21 |
| 6734515 | Semiconductor light receiving element | Hiroaki Okagawa, Youichiro Ohuchi, Masahiro Koto, Kazumasa Hiramatsu, Yutaka Hamamura +1 more | 2004-05-11 |
| 6700179 | Method for growing GaN compound semiconductor crystal and semiconductor substrate | Yoichiro Ouchi, Hiroaki Okagawa, Masahiro Koto | 2004-03-02 |
| 6225650 | GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof | Hiroaki Okagawa, Youichiro Ohuchi, Keiji Miyashita, Kazumasa Hiramatsu, Nobuhiko Sawaki +2 more | 2001-05-01 |
| 5810925 | GaN single crystal | Shinichi Watabe, Hiroaki Okagawa, Kazumasa Hiramatsu | 1998-09-22 |
| 5793061 | Group-III nitride based light emitter | Youichiro Ohuchi, Hiroaki Okagawa, Shinichi Watabe | 1998-08-11 |
| 5770887 | Gan single crystal | Shinichi Watabe, Hiroaki Okagawa, Kazumasa Hiramatsu | 1998-06-23 |
| 5710440 | Semiconductor light emitting element with In GaAlP active layer of specified thickness | Hiroaki Okagawa, Takayuki Hashimoto, Keiji Miyashita, Tomoo Yamada | 1998-01-20 |
| 5635733 | Semiconductor light emitting element with a current diffusing layer having a changing carrier concentration therein | Hiroaki Okagawa, Takayuki Hashimoto, Keiji Miyashita, Tomoo Yamada | 1997-06-03 |
| 5631475 | Semiconductor light emitting element | Shinichi Watabe, Hiroaki Okagawa, Takayuki Hashimoto | 1997-05-20 |
| 4944811 | Material for light emitting element and method for crystal growth thereof | Tokuzo Sukegawa | 1990-07-31 |