Issued Patents All Time
Showing 26–40 of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5402834 | Solution preparation system | Michael Levin, Alan B. Todtenkopf | 1995-04-04 |
| 5343789 | Through hole and bar feed support | — | 1994-09-06 |
| 5334548 | High performance composed pillar dRAM cell | Bing W. Shen, Robert Reid Doering | 1994-08-02 |
| 5300450 | High performance composed pillar DRAM cell | Bing W. Shen, Robert Reid Doering | 1994-04-05 |
| 5251168 | Boundary cells for improving retention time in memory devices | Gishi Chung, William R. McKee, Lionel S. White, Jr. | 1993-10-05 |
| 5225697 | dRAM cell and method | Satwinder S. Malhi, Gordon P. Pollack | 1993-07-06 |
| D336634 | Electronic circuit setup station for education and training | Robert A. Melone | 1993-06-22 |
| 5208657 | DRAM Cell with trench capacitor and vertical channel in substrate | Pallab K. Chatterjee, Satwinder S. Malhi | 1993-05-04 |
| 5135879 | Method of fabricating a high density EPROM cell on a trench wall | — | 1992-08-04 |
| 5106776 | Method of making high performance composed pillar dRAM cell | Bing W. Shen, Robert Reid Doering | 1992-04-21 |
| 5103276 | High performance composed pillar dRAM cell | Bing W. Shen, Robert Reid Doering | 1992-04-07 |
| 5017977 | Dual EPROM cells on trench walls with virtual ground buried bit lines | — | 1991-05-21 |
| 4958212 | Trench memory cell | Clarence W. Teng, Robert Reid Doering, Ashwin H. Shah, Bing W. Shen, Mark Bordelon | 1990-09-18 |
| 4939104 | Method for forming a buried lateral contact | Gordon P. Pollack, Donald M. Bordelon, Satwinder S. Malhi | 1990-07-03 |
| 4824793 | Method of making DRAM cell with trench capacitor | Satwinder S. Malhi | 1989-04-25 |