Patent Leaderboard
USPTO Patent Rankings Data through Sept 30, 2025
GW

Glen Wilk

TITexas Instruments: 31 patents #311 of 12,488Top 3%
AAAsm America: 9 patents #25 of 181Top 15%
ASAgere Systems: 8 patents #142 of 1,849Top 8%
ATAT&T: 1 patents #10,626 of 18,772Top 60%
Dallas, TX: #76 of 7,543 inventorsTop 2%
Texas: #1,774 of 125,132 inventorsTop 2%
Overall (All Time): #56,828 of 4,157,543Top 2%
49 Patents All Time

Issued Patents All Time

Showing 26–49 of 49 patents

Patent #TitleCo-InventorsDate
6544875 Chemical vapor deposition of silicate high dielectric constant materials 2003-04-08
6534348 Ultrascaled MIS transistors fabricated using silicon-on-lattice-matched insulator approach Theodore S. Moise 2003-03-18
6498502 Apparatus and method for evaluating semiconductor structures and devices Henry Litzmann Edwards, Theodore S. Moise 2002-12-24
6495474 Method of fabricating a dielectric layer Conor S. Rafferty 2002-12-17
6479404 Process for fabricating a semiconductor device having a metal oxide or a metal silicate gate dielectric layer Michael L. Steigerwald 2002-11-12
6468856 High charge storage density integrated circuit capacitor Robert M. Wallace, Mark Anthony, Dim-Lee Kwong 2002-10-22
6436801 Hafnium nitride gate dielectric Robert M. Wallace 2002-08-20
6420729 Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics Robert M. Wallace, Yi Wei, Sunil Hattangady 2002-07-16
6291282 Method of forming dual metal gate structures or CMOS devices Scott R. Summerfelt 2001-09-18
6291283 Method to form silicates as high dielectric constant materials 2001-09-18
6291866 Zirconium and/or hafnium oxynitride gate dielectric Robert M. Wallace, Richard Stoltz 2001-09-18
6291867 Zirconium and/or hafnium silicon-oxynitride gate dielectric Robert M. Wallace, Richard Stoltz 2001-09-18
6277681 Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics Robert M. Wallace, Yi Wei, Sunil Hattangady 2001-08-21
6274510 Lower temperature method for forming high quality silicon-nitrogen dielectrics John Mark Anthony, Yi Wei, Robert M. Wallace 2001-08-14
6258637 Method for thin film deposition on single-crystal semiconductor substrates Yi Wei, Robert M. Wallace 2001-07-10
6255150 Use of crystalline SiOx barriers for Si-based resonant tunneling diodes Berinder Brar 2001-07-03
6248621 Method of growing high-quality crystalline silicon quantum wells for RTD structures John Mark Anthony 2001-06-19
6245606 Low temperature method for forming a thin, uniform layer of aluminum oxide Robert M. Wallace 2001-06-12
6150242 Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode Jan Paul Anthonie van der Wagt, Robert M. Wallace 2000-11-21
6069368 Method for growing high-quality crystalline Si quantum wells for RTD structures John Mark Anthony 2000-05-30
6040230 Method of forming a nano-rugged silicon-containing layer John Mark Anthony, Robert M. Wallace, Yi Wei 2000-03-21
6020243 Zirconium and/or hafnium silicon-oxynitride gate dielectric Robert M. Wallace, Richard Stoltz 2000-02-01
6020247 Method for thin film deposition on single-crystal semiconductor substrates Yi Wei, Robert M. Wallace 2000-02-01
6013553 Zirconium and/or hafnium oxynitride gate dielectric Robert M. Wallace, Richard Stoltz 2000-01-11