TL

Thomas A. Langdo

TSMC: 19 patents #1,728 of 12,232Top 15%
AS Amberwave Systems: 14 patents #5 of 20Top 25%
DL Draper Laboratory: 6 patents #109 of 921Top 15%
RS Redox Power Systems: 3 patents #5 of 10Top 50%
CS Contour Semiconductor: 1 patents #6 of 11Top 55%
UT Ut-Battelle: 1 patents #807 of 1,792Top 50%
📍 Cambridge, MA: #163 of 8,183 inventorsTop 2%
🗺 Massachusetts: #1,485 of 88,656 inventorsTop 2%
Overall (All Time): #65,145 of 4,157,543Top 2%
45
Patents All Time

Issued Patents All Time

Showing 26–45 of 45 patents

Patent #TitleCo-InventorsDate
8026534 III-V semiconductor device structures Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald 2011-09-27
8017451 Electronic modules and methods for forming the same Livia M. Racz, Gary B. Tepolt, Jeffrey C. Thompson, Andrew J. Mueller 2011-09-13
7955435 Method of producing high quality relaxed silicon germanium layers Eugene A. Fitzgerald, Richard Westhoff, Matthew T. Currie, Christopher Vineis 2011-06-07
7933133 Low cost, high-density rectifier matrix memory Daniel R. Shepard, Arthur J. Pitera 2011-04-26
7838392 Methods for forming III-V semiconductor device structures Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald 2010-11-23
7674335 Method of producing high quality relaxed silicon germanium layers Eugene A. Fitzgerald, Richard Westhoff, Matthew T. Currie, Christopher Vineis 2010-03-09
7638842 Lattice-mismatched semiconductor structures on insulators Matthew T. Currie, Anthony J. Lochtefeld, Zhiyuan Cheng 2009-12-29
7615829 Elevated source and drain elements for strained-channel heterojuntion field-effect transistors Anthony J. Lochtefeld, Richard Westhoff 2009-11-10
7588994 Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald 2009-09-15
7439164 Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Anthony J. Lochtefeld 2008-10-21
7420201 Strained-semiconductor-on-insulator device structures with elevated source/drain regions Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald 2008-09-02
7414259 Strained germanium-on-insulator device structures Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald 2008-08-19
7297612 Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald 2007-11-20
7259388 Strained-semiconductor-on-insulator device structures Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald 2007-08-21
7122449 Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Anthony J. Lochtefeld 2006-10-17
7109516 Strained-semiconductor-on-insulator finFET device structures Matthew T. Currie, Glyn Braithwaite, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald 2006-09-19
7074623 Methods of forming strained-semiconductor-on-insulator finFET device structures Anthony J. Lochtefeld, Richard Hammond, Matthew T. Currie, Glyn Braithwaite, Eugene A. Fitzgerald 2006-07-11
7041170 Method of producing high quality relaxed silicon germanium layers Eugene A. Fitzgerald, Richard Westhoff, Matthew T. Currie, Christopher Vineis 2006-05-09
6995430 Strained-semiconductor-on-insulator device structures Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald 2006-02-07
6946371 Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Anthony J. Lochtefeld 2005-09-20