Issued Patents All Time
Showing 51–75 of 166 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11404561 | Semiconductor device and manufacturing method thereof | Shahaji B. More | 2022-08-02 |
| 11393898 | Method of manufacturing a semiconductor device and a semiconductor device | Shu Kuan, Shahaji B. More, Chien-Chih Lin, Cheng-Han Lee | 2022-07-19 |
| 11367784 | Method of manufacturing a semiconductor device and a semiconductor device | Shahaji B. More, Chien-Chih Lin, Cheng-Han Lee, Shu Kuan | 2022-06-21 |
| 11342228 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Chih-Yu Ma, Zheng-Yang Pan, Shahaji B. More, Cheng-Han Lee | 2022-05-24 |
| 11315838 | FinFET device and method of forming same | Chien-Chih Lin, Kun-Yu Lee, Shahaji B. More, Cheng-Han Lee | 2022-04-26 |
| 11302782 | In-situ straining epitaxial process | Hsiu-Ting Chen, Yi-Ming Huang, Hsing-Chi Chen, Pei-Ren Jeng | 2022-04-12 |
| 11233123 | Fully strained channel | Shahaji B. More, Huai-Tei Yang, Zheng-Yang Pan, Chun-Chieh Wang, Cheng-Han Lee | 2022-01-25 |
| 11222963 | Semiconductor device and method | Shahaji B. More | 2022-01-11 |
| 11171220 | Structure and method for high-K metal gate | Shahaji B. More, Cheng-Han Lee, Zheng-Yang Pan, Chun-Chieh Wang | 2021-11-09 |
| 11152362 | Fin field effect transistor (FinFET) device structure | Chun-Chieh Wang, Zheng-Yang Pan, Yi-Min Huang, Tsung-Lin Lee | 2021-10-19 |
| 11094826 | FinFET device and method of forming same | Shahaji B. More | 2021-08-17 |
| 11069810 | Semiconductor device having a shaped epitaxial region | Yi-Min Huang, Cheng-Han Lee | 2021-07-20 |
| 11049945 | Semiconductor device structure and method for forming the same | Shih-Wen Huang, Yun-Wen Chu, Hong-Hsien Ke, Chia-Hui Lin, Shin-Yeu Tsai | 2021-06-29 |
| 11031808 | Power supply system | — | 2021-06-08 |
| 11018176 | Metal shielding layer in backside illumination image sensor chips and methods for forming the same | Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu +3 more | 2021-05-25 |
| 11011433 | NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layers | Shahaji B. More, Zheng-Yang Pan, Chun-Chieh Wang | 2021-05-18 |
| 11004688 | FinFET device and method of forming | Yi-Min Huang, Huai-Tei Yang | 2021-05-11 |
| 10991826 | Semiconductor device and methods of forming same | Chih-Yu Ma, Shahaji B. More, Yi-Min Huang | 2021-04-27 |
| 10950603 | Semiconductor device and method | Cheng-Han Lee, Yi-Min Huang | 2021-03-16 |
| 10937910 | Semiconductor structure with source/drain multi-layer structure and method for forming the same | Chun-Chieh Wang, Yu-Ting Lin, Yueh-Ching Pai, Huai-Tei Yang | 2021-03-02 |
| 10930781 | P-type strained channel in a fin field effect transistor (FinFET) device | Shahaji B. More, Huai-Tei Yang, Shu Kuan, Cheng-Han Lee | 2021-02-23 |
| 10879240 | Fin field effect transistor (FinFET) device structure | Chun-Chieh Wang, Zheng-Yang Pan, Yi-Min Huang, Shahaji B. More, Tsung-Lin Lee | 2020-12-29 |
| 10879396 | Semiconductor device with source/drain structures | Shahaji B. More, Zheng-Yang Pan, Chun-Chieh Wang, Cheng-Han Lee | 2020-12-29 |
| 10879124 | Method to form a fully strained channel region | Chun-Chieh Wang, Huai-Tei Yang, Zheng-Yang Pan, Shahaji B. More, Cheng-Han Lee | 2020-12-29 |
| 10879126 | Semiconductor device and method | Shahaji B. More, Zheng-Yang Pan, Cheng-Han Lee | 2020-12-29 |