Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12414363 | Semiconductor device and manufacturing methods thereof | Sheng-Syun WONG, Shahaji B. More | 2025-09-09 |
| 12402393 | FinFET EPI channels having different heights on a stepped substrate | Cheng-Han Lee, Shih-Chieh Chang | 2025-08-26 |
| 12165924 | Semiconductor devices having merged source/drain features and methods of fabrication thereof | Shahaji B. More, Chung-Hsien Yeh | 2024-12-10 |
| 11935955 | Semiconductor device and methods of forming same | Shahaji B. More, Yi-Min Huang, Shih-Chieh Chang | 2024-03-19 |
| 11776851 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee | 2023-10-03 |
| 11721760 | Dopant concentration boost in epitaxially formed material | Zheng-Yang Pan, Shih-Chieh Chang, Cheng-Han Lee | 2023-08-08 |
| 11705371 | Semiconductor devices having merged source/drain features and methods of fabrication thereof | Shahaji B. More, Chung-Hsien Yeh | 2023-07-18 |
| 11545399 | FinFET EPI channels having different heights on a stepped substrate | Cheng-Han Lee, Shih-Chieh Chang | 2023-01-03 |
| 11522086 | Semiconductor device and methods of forming same | Shahaji B. More, Yi-Min Huang, Shih-Chieh Chang | 2022-12-06 |
| 11342228 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee | 2022-05-24 |
| 10991826 | Semiconductor device and methods of forming same | Shahaji B. More, Yi-Min Huang, Shih-Chieh Chang | 2021-04-27 |
| 10734524 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee | 2020-08-04 |
| 10720530 | Semiconductor device and methods of forming same | Shahaji B. More, Yi-Min Huang, Shih-Chieh Chang | 2020-07-21 |
| 10510618 | FinFET EPI channels having different heights on a stepped substrate | Cheng-Han Lee, Shih-Chieh Chang | 2019-12-17 |
| 10490661 | Dopant concentration boost in epitaxially formed material | Zheng-Yang Pan, Shih-Chieh Chang, Cheng-Han Lee | 2019-11-26 |
| 10347764 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee | 2019-07-09 |
| 9721826 | Wafer supporting structure, and device and method for manufacturing semiconductor | Yii-Chi LIN, Zheng-Yang Pan, Chia-Chiung Lo | 2017-08-01 |