Issued Patents All Time
Showing 76–100 of 166 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10868183 | FinFET device and methods of forming the same | Shahaji B. More, Cheng-Han Lee | 2020-12-15 |
| 10867799 | FinFET device and methods of forming same | Chun-Chieh Wang, Zheng-Yang Pan, Cheng-Han Lee, Huai-Tei Yang, Shahaji B. More | 2020-12-15 |
| 10855197 | Power supply system | — | 2020-12-01 |
| 10840358 | Method for manufacturing semiconductor structure with source/drain structure having modified shape | Shahaji B. More, Cheng-Han Lee, Huai-Tei Yang | 2020-11-17 |
| 10833074 | Semiconductor device and method | Cheng-Han Lee, Yi-Min Huang | 2020-11-10 |
| 10749010 | Method for manufacturing finFET structure with doped region | Shahaji B. More, Chun Hsiung Tsai, Cheng-Yi Peng, Kuo-Feng Yu | 2020-08-18 |
| 10734524 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Chih-Yu Ma, Zheng-Yang Pan, Shahaji B. More, Cheng-Han Lee | 2020-08-04 |
| 10720530 | Semiconductor device and methods of forming same | Chih-Yu Ma, Shahaji B. More, Yi-Min Huang | 2020-07-21 |
| 10680106 | Method of forming source/drain epitaxial stacks | Shahaji B. More, Huai-Tei Yang, Cheng-Han Lee | 2020-06-09 |
| 10672886 | Structure and method for high-k metal gate | Shahaji B. More, Cheng-Han Lee, Zheng-Yang Pan, Chun-Chieh Wang | 2020-06-02 |
| 10651287 | Method for forming source/drain contacts | Shahaji B. More, Chun Hsiung Tsai, Kuo-Feng Yu, Cheng-Yi Peng | 2020-05-12 |
| 10644116 | In-situ straining epitaxial process | Hsiu-Ting Chen, Yi-Ming Huang, Hsing-Chi Chen, Pei-Ren Jeng | 2020-05-05 |
| 10636909 | Formation method of semiconductor device with source/drain structures | Shahaji B. More, Zheng-Yang Pan, Chun-Chieh Wang, Cheng-Han Lee | 2020-04-28 |
| 10629496 | Methods for forming transistor gates with hafnium oxide layers and lanthanum oxide layers | Shahaji B. More, Zheng-Yang Pan, Chun-Chieh Wang | 2020-04-21 |
| 10535736 | Fully strained channel | Shahaji B. More, Huai-Tei Yang, Zheng-Yang Pan, Chun-Chieh Wang, Cheng-Han Lee | 2020-01-14 |
| 10522358 | FinFET device and methods of forming same | Chun-Chieh Wang, Zheng-Yang Pan, Cheng-Han Lee, Huai-Tei Yang, Shahaji B. More | 2019-12-31 |
| 10522359 | FinFET device and method of forming | Yi-Min Huang, Huai-Tei Yang | 2019-12-31 |
| 10515951 | Semiconductor device and method | Cheng-Han Lee, Yi-Min Huang | 2019-12-24 |
| 10510871 | Semiconductor device and method | Shahaji B. More | 2019-12-17 |
| 10510618 | FinFET EPI channels having different heights on a stepped substrate | Cheng-Han Lee, Chih-Yu Ma | 2019-12-17 |
| 10510889 | P-type strained channel in a fin field effect transistor (FinFET) device | Shahaji B. More, Huai-Tei Yang, Shu Kuan, Cheng-Han Lee | 2019-12-17 |
| 10505042 | Semiconductor device having a shaped epitaxial region | Yi-Min Huang, Cheng-Han Lee | 2019-12-10 |
| 10490661 | Dopant concentration boost in epitaxially formed material | Chih-Yu Ma, Zheng-Yang Pan, Cheng-Han Lee | 2019-11-26 |
| 10468530 | Semiconductor structure with source/drain multi-layer structure and method for forming the same | Chun-Chieh Wang, Yu-Ting Lin, Yueh-Ching Pai, Huai-Tei Yang | 2019-11-05 |
| 10361279 | Method for manufacturing FinFET structure with doped region | Shahaji B. More, Chun Hsiung Tsai, Cheng-Yi Peng, Kuo-Feng Yu | 2019-07-23 |