Issued Patents All Time
Showing 76–98 of 98 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7217668 | Gate technology for strained surface channel and strained buried channel MOSFET devices | Eugene A. Fitzgerald, Richard Hammond | 2007-05-15 |
| 7217603 | Methods of forming reacted conductive gate electrodes | Richard Hammond | 2007-05-15 |
| 7208332 | Methods for preserving strained semiconductor substrate layers during CMOS processing | Anthony J. Lochtefeld | 2007-04-24 |
| 7202121 | Methods for preserving strained semiconductor substrate layers during CMOS processing | Anthony J. Lochtefeld | 2007-04-10 |
| 7138649 | Dual-channel CMOS transistors with differentially strained channels | Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2006-11-21 |
| 7138310 | Semiconductor devices having strained dual channel layers | Anthony J. Lochtefeld, Christopher Leitz, Eugene A. Fitzgerald | 2006-11-21 |
| 7109516 | Strained-semiconductor-on-insulator finFET device structures | Thomas A. Langdo, Glyn Braithwaite, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2006-09-19 |
| 7074623 | Methods of forming strained-semiconductor-on-insulator finFET device structures | Anthony J. Lochtefeld, Thomas A. Langdo, Richard Hammond, Glyn Braithwaite, Eugene A. Fitzgerald | 2006-07-11 |
| 7074655 | Gate material for semiconductor device fabrication | Anthony J. Lochtefeld, Dimitri Antoniadis | 2006-07-11 |
| 7071014 | Methods for preserving strained semiconductor substrate layers during CMOS processing | Anthony J. Lochtefeld | 2006-07-04 |
| 7060632 | Methods for fabricating strained layers on semiconductor substrates | Eugene A. Fitzgerald | 2006-06-13 |
| 7049627 | Semiconductor heterostructures and related methods | Christopher Vineis, Vicky Yang, Richard Westhoff, Christopher Leitz | 2006-05-23 |
| 7041170 | Method of producing high quality relaxed silicon germanium layers | Eugene A. Fitzgerald, Richard Westhoff, Christopher Vineis, Thomas A. Langdo | 2006-05-09 |
| 6995430 | Strained-semiconductor-on-insulator device structures | Thomas A. Langdo, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2006-02-07 |
| 6991972 | Gate material for semiconductor device fabrication | Anthony J. Lochtefeld, Dimitri Antoniadis | 2006-01-31 |
| 6982474 | Reacted conductive gate electrodes | Richard Hammond | 2006-01-03 |
| 6960781 | Shallow trench isolation process | Anthony J. Lochtefeld | 2005-11-01 |
| 6933518 | RF circuits including transistors having strained material layers | Glyn Braithwaite, Richard Hammond | 2005-08-23 |
| 6900094 | Method of selective removal of SiGe alloys | Richard Hammond | 2005-05-31 |
| 6891209 | Dynamic random access memory trench capacitors | Mayank Bulsara, Anthony J. Lochtefeld | 2005-05-10 |
| 6846715 | Gate technology for strained surface channel and strained buried channel MOSFET devices | Eugene A. Fitzgerald, Richard Hammond | 2005-01-25 |
| 6831292 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Anthony J. Lochtefeld, Richard Hammond, Eugene A. Fitzgerald | 2004-12-14 |
| 6583015 | Gate technology for strained surface channel and strained buried channel MOSFET devices | Eugene A. Fitzgerald, Richard Hammond | 2003-06-24 |