Issued Patents All Time
Showing 26–50 of 98 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8785315 | Reacted conductive gate electrodes and methods of making the same | Richard Hammond | 2014-07-22 |
| 8748292 | Methods of forming strained-semiconductor-on-insulator device structures | Thomas A. Langdo, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2014-06-10 |
| 8722495 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Anthony J. Lochtefeld, Richard Hammond, Eugene A. Fitzgerald | 2014-05-13 |
| 8709884 | Hybrid fin field-effect transistor structures and related methods | — | 2014-04-29 |
| 8629477 | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication | Anthony J. Lochtefeld, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo | 2014-01-14 |
| 8586452 | Methods for forming semiconductor device structures | Anthony J. Lochtefeld, Thomas A. Langdo, Richard Hammond, Eugene A. Fitzgerald | 2013-11-19 |
| 8519436 | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication | Anthony J. Lochtefeld, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo | 2013-08-27 |
| 8441055 | Methods for forming strained channel dynamic random access memory devices | Mayank Bulsara, Anthony J. Lochtefeld | 2013-05-14 |
| 8344355 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Anthony J. Lochtefeld, Richard Hammond, Eugene A. Fitzgerald | 2013-01-01 |
| 8324660 | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication | Anthony J. Lochtefeld, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo | 2012-12-04 |
| 8253181 | Strained channel dynamic random access memory devices | Mayank Bulsara, Anthony J. Lochtefeld | 2012-08-28 |
| 8247798 | RF circuits including transistors having strained material layers | Glyn Braithwaite, Richard Hammond | 2012-08-21 |
| 8187379 | Method of producing high quality relaxed silicon germanium layers | Eugene A. Fitzgerald, Richard Westhoff, Christopher Vineis, Thomas A. Langdo | 2012-05-29 |
| 8183627 | Hybrid fin field-effect transistor structures and related methods | — | 2012-05-22 |
| 8129747 | Semiconductor heterostructures having reduced dislocation pile-ups and related methods | Richard Westhoff, Vicky Yang, Christopher Vineis, Christopher Leitz | 2012-03-06 |
| 8129821 | Reacted conductive gate electrodes | Richard Hammond | 2012-03-06 |
| 8106380 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Anthony J. Lochtefeld, Richard Hammond, Eugene A. Fitzgerald | 2012-01-31 |
| 8026534 | III-V semiconductor device structures | Thomas A. Langdo, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2011-09-27 |
| 7955435 | Method of producing high quality relaxed silicon germanium layers | Eugene A. Fitzgerald, Richard Westhoff, Christopher Vineis, Thomas A. Langdo | 2011-06-07 |
| 7906776 | RF circuits including transistors having strained material layers | Glyn Braithwaite, Richard Hammond | 2011-03-15 |
| 7884353 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Anthony J. Lochtefeld, Richard Hammond, Eugene A. Fitzgerald | 2011-02-08 |
| 7846802 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Anthony J. Lochtefeld, Richard Hammond, Eugene A. Fitzgerald | 2010-12-07 |
| 7838392 | Methods for forming III-V semiconductor device structures | Thomas A. Langdo, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald | 2010-11-23 |
| 7829442 | Semiconductor heterostructures having reduced dislocation pile-ups and related methods | Richard Westhoff, Vicky Yang, Christopher Vineis, Christopher Leitz | 2010-11-09 |
| 7776697 | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | Anthony J. Lochtefeld, Richard Hammond, Eugene A. Fitzgerald | 2010-08-17 |