DS

Dhanyakumar Mahaveer Sathaiya

TSMC: 13 patents #2,298 of 12,232Top 20%
Overall (All Time): #360,184 of 4,157,543Top 9%
13
Patents All Time

Issued Patents All Time

Showing 1–13 of 13 patents

Patent #TitleCo-InventorsDate
12218205 2D-channel transistor structure with source-drain engineering Khaderbad Mrunal Abhijith, Tzer-Min Shen 2025-02-04
12166079 2D channel transistors with low contact resistance Mrunal A. Khaderbad, Wei-Yen Woon 2024-12-10
12087819 Dual channel structure Mrunal A. Khaderbad, Keng-Chu Lin, Tzer-Min Shen 2024-09-10
12068374 Method of dopant deactivation underneath gate Kai-Chieh Yang, Ken-Ichi Goto, Wei-Hao Wu, Yuan-Chen Sun, Zhiqiang Wu 2024-08-20
11798985 Methods for manufacturing isolation layers in stacked transistor structures Mrunal A. Khaderbad, Huicheng Chang, Ko-Feng Chen, Keng-Chu Lin 2023-10-24
11728391 2d-channel transistor structure with source-drain engineering Khaderbad Mrunal Abhijith, Tzer-Min Shen 2023-08-15
11476333 Dual channel structure Mrunal A. Khaderbad, Keng-Chu Lin, Tzer-Min Shen 2022-10-18
11450666 Semiconductor devices including two-dimensional material and methods of fabrication thereof Mrunal A. Khaderbad 2022-09-20
10985246 MOSFET with selective dopant deactivation underneath gate Kai-Chieh Yang, Wei-Hao Wu, Ken-Ichi Goto, Zhiqiang Wu, Yuan-Chen Sun 2021-04-20
10157985 MOSFET with selective dopant deactivation underneath gate Kai-Chieh Yang, Wei-Hao Wu, Ken-Ichi Goto, Zhiqiang Wu, Yuan-Chen Sun 2018-12-18
9263345 SOI transistors with improved source/drain structures with enhanced strain Ken-Ichi Goto, Ching-Chang Wu, Tzer-Min Shen 2016-02-16
9153662 MOSFET with selective dopant deactivation underneath gate Kai-Chieh Yang, Wei-Hao Wu, Ken-Ichi Goto, Zhiqiang Wu, Yuan-Chen Sun 2015-10-06
8993424 Method for forming a semiconductor transistor device with optimized dopant profile Chia-Wen Liu, Tsung-Hsing Yu, Wei-Hao Wu, Ken-Ichi Goto, Tzer-Min Shen +1 more 2015-03-31