Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11955554 | Method of fabricating a multi-gate device | Huan-Sheng Wei, Hung-Li Chiang, Yi-Ming Sheu, Zhiqiang Wu, Chung-Cheng Wu +1 more | 2024-04-09 |
| 11393926 | Multi-gate device | Huan-Sheng Wei, Hung-Li Chiang, Yi-Ming Sheu, Zhiqiang Wu, Chung-Cheng Wu +1 more | 2022-07-19 |
| 11152338 | Semiconductor device and manufacturing method thereof | Zhi-Qiang WU, Chun-Fu Cheng, Chung-Cheng Wu, Yi-Han Wang | 2021-10-19 |
| 11145762 | Multi-gate device | Huan-Sheng Wei, Hung-Li Chiang, Yi-Ming Sheu, Zhiqiang Wu, Chung-Cheng Wu +1 more | 2021-10-12 |
| 10734503 | Asymmetric semiconductor device | Jean-Pierre Colinge, Carlos H. Diaz, Yeh Hsu, Tsung-Hsing Yu | 2020-08-04 |
| 10672742 | Semiconductor device and manufacturing method thereof | Zhi-Qiang WU, Chun-Fu Cheng, Chung-Cheng Wu, Yi-Han Wang | 2020-06-02 |
| 10276664 | Semiconductor structures and methods for multi-dimension of nanowire diameter to improve drive current | Tsung-Hsing Yu, Yeh Hsu, Jean-Pierre Colinge | 2019-04-30 |
| 10026826 | Method of forming semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectric | Jean-Pierre Colinge, Carlos H. Diaz, Yeh Hsu, Tsung-Hsing Yu | 2018-07-17 |
| 10008603 | Multi-gate device and method of fabrication thereof | Huan-Sheng Wei, Hung-Li Chiang, Yi-Ming Sheu, Zhiqiang Wu, Chung-Cheng Wu +1 more | 2018-06-26 |
| 9929245 | Semiconductor structures and methods for multi-level work function | Jean-Pierre Colinge, Wei-Hao Wu, Chih-Hao Wang, Carlos H. Diaz | 2018-03-27 |
| 9837533 | Semiconductor structure and manufacturing method thereof | Shin-Jiun Kuang, Tsung-Hsing Yu, Yi-Ming Sheu, Chun-Yi Lee | 2017-12-05 |
| 9768297 | Process design to improve transistor variations and performance | Tsung-Hsing Yu, Yeh Hsu, Shih-Syuan Huang, Ken-Ichi Goto, Zhiqiang Wu | 2017-09-19 |
| 9728602 | Variable channel strain of nanowire transistors to improve drive current | Tsung-Hsing Yu, Yeh Hsu, Jean-Pierre Colinge | 2017-08-08 |
| 9716172 | Semiconductor device having multiple active area layers and its formation thereof | Tsung-Hsing Yu, Yeh Hsu, Ken-Ichi Goto | 2017-07-25 |
| 9660049 | Semiconductor transistor device with dopant profile | Tsung-Hsing Yu, Ken-Ichi Goto | 2017-05-23 |
| 9653545 | MOSFET structure with T-shaped epitaxial silicon channel | Mahaveer Sathaiya Dhanyakumar, Wei-Hao Wu, Tsung-Hsing Yu, Tzer-Min Shen, Ken-Ichi Goto +1 more | 2017-05-16 |
| 9634132 | Semiconductor structures and methods for multi-level band gap energy of nanowire transistors to improve drive current | Tsung-Hsing Yu, Yeh Hsu, Jean-Pierre Colinge | 2017-04-25 |
| 9620591 | Semiconductor structures and methods for multi-level work function and multi-valued channel doping of nanowire transistors to improve drive current | Tsung-Hsing Yu, Yeh Hsu, Jean-Pierre Colinge | 2017-04-11 |
| 9564431 | Semiconductor structures and methods for multi-level work function | Jean-Pierre Colinge, Wei-Hao Wu, Chih-Hao Wang, Carlos H. Diaz | 2017-02-07 |
| 9536746 | Recess and epitaxial layer to improve transistor performance | Yeh Hsu, Tsung-Hsing Yu, Ken-Ichi Goto, Shih-Syuan Huang | 2017-01-03 |
| 9525031 | Epitaxial channel | Tsung-Hsing Yu, Ken-Ichi Goto, Yeh Hsu | 2016-12-20 |
| 9484460 | Semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectric | Jean-Pierre Colinge, Tsung-Hsing Yu, Yeh Hsu, Carlos H. Diaz | 2016-11-01 |
| 9236445 | Transistor having replacement gate and epitaxially grown replacement channel region | Tsung-Hsing Yu, Wei-Hao Wu, Meikei Ieong, Ken-Ichi Goto, Zhiqiang Wu | 2016-01-12 |
| 9224814 | Process design to improve transistor variations and performance | Tsung-Hsing Yu, Yeh Hsu, Shih-Syuan Huang, Ken-Ichi Goto, Zhiqiang Wu | 2015-12-29 |
| 9196730 | Variable channel strain of nanowire transistors to improve drive current | Tsung-Hsing Yu, Yeh Hsu, Jean-Pierre Colinge | 2015-11-24 |