Issued Patents All Time
Showing 176–200 of 282 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9263252 | Method of protecting an interlayer dielectric layer and structure formed thereby | Chun-Wei Chang, Yi-An Lin, Neng-Kuo Chen, Sey-Ping Sun, Yu-Lien Huang | 2016-02-16 |
| 9257343 | Method for fabricating fin field effect transistors | Ling-Yen Yeh, Chi-Yuan Shih, Yi-Tang Lin, Chih-Sheng Chang | 2016-02-09 |
| 9257349 | Method of scavenging impurities in forming a gate stack having an interfacial layer | Kuan-Ting Liu, Liang-Gi Yao, Yasutoshi Okuno | 2016-02-09 |
| 9246004 | Strained structures of semiconductor devices | Cheng-Hsien Wu, Chih-Hsin Ko | 2016-01-26 |
| 9245970 | Semiconductor structure having interfacial layer and high-k dielectric layer | Liang-Gi Yao, Chun-Hu Cheng, Chen-Yi Lee, Jeff J. Xu | 2016-01-26 |
| 9245805 | Germanium FinFETs with metal gates and stressors | Chih Chieh Yeh, Chih-Sheng Chang | 2016-01-26 |
| 9236253 | Strained structure of a semiconductor device | Chung-Hsien Chen, Ting-Chu Ko, Chih-Hao Chang, Chih-Sheng Chang, Shou-Zen Chang | 2016-01-12 |
| 9224734 | CMOS devices with reduced leakage and methods of forming the same | Yi-Jing Lee, Cheng-Hsien Wu, Chih-Hsin Ko | 2015-12-29 |
| 9214556 | Self-aligned dual-metal silicide and germanide formation | Sey-Ping Sun, Ling-Yen Yeh, Chi-Yuan Shih, Li-Chi Yu, Chun Hsiung Tsai +6 more | 2015-12-15 |
| 9209066 | Isolation structure of semiconductor device | Shu-Han Chen, Cheng-Hsien Wu, Chih-Hsin Ko | 2015-12-08 |
| 9209201 | Systems and methods for integrating different channel materials into a CMOS circuit by using a semiconductor structure having multiple transistor layers | Yi-Tang Lin | 2015-12-08 |
| 9209023 | Growing III-V compound semiconductors from trenches filled with intermediate layers | Chih-Hsin Ko, Cheng-Hsien Wu | 2015-12-08 |
| 9202691 | Semiconductor device having modified profile metal gate | Yu-Lien Huang, Chi-Wen Liu, Zhao-Cheng Chen, Ming-Huan Tsai | 2015-12-01 |
| 9196709 | Methods for forming semiconductor regions in trenches | Yi-Jing Lee, Cheng-Hsien Wu, Chih-Hsin Ko | 2015-11-24 |
| 9194804 | Stress analysis of 3-D structures using tip-enhanced Raman scattering technology | Liang-Gi Yao, Yasutoshi Okuno, Wei-Shan Hu, Yusuke Oniki, Ling-Yen Yeh | 2015-11-24 |
| 9184050 | Inverted trapezoidal recess for epitaxial growth | Chih-Hsin Ko, Cheng-Hsien Wu | 2015-11-10 |
| 9177792 | Reverse tone STI formation and epitaxial growth of semiconductor between STI regions | Kai-Tai Chang, Yi-Shan Chen, Hsin-Chih Chen, Chih-Hsin Ko | 2015-11-03 |
| 9171929 | Strained structure of semiconductor device and method of making the strained structure | Tsung-Lin Lee, Chih Chieh Yeh, Feng Yuan, Cheng-Yi Peng | 2015-10-27 |
| 9159824 | FinFETs with strained well regions | Yi-Jing Lee, Chi-Wen Liu, Cheng-Hsien Wu, Chih-Hsin Ko | 2015-10-13 |
| 9153695 | Fin-last finFET and methods of forming same | Yu-Lien Huang, Ming-Huan Tsai | 2015-10-06 |
| 9142474 | Passivation structure of fin field effect transistor | Yen-Yu Chen, Chi-Yuan Shih, Ling-Yen Yeh | 2015-09-22 |
| 9136383 | Contact structure of semiconductor device | Ling-Yen Yeh, Chi-Yuan Shih, Yen-Yu Chen | 2015-09-15 |
| 9123633 | Methods for forming semiconductor regions in trenches | Yi-Jing Lee, Cheng-Hsien Wu, Chih-Hsin Ko | 2015-09-01 |
| 9123546 | Multi-layer semiconductor device structures with different channel materials | Yi-Tang Lin, Chih-Hsin Ko | 2015-09-01 |
| 9105490 | Contact structure of semiconductor device | Sung-Li Wang, Ding-Kang Shih, Chin-Hsiang Lin, Sey-Ping Sun | 2015-08-11 |