Issued Patents All Time
Showing 251–275 of 282 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8716765 | Contact structure of semiconductor device | Cheng-Hsien Wu, Chih-Hsin Ko | 2014-05-06 |
| 8674341 | High-mobility multiple-gate transistor with improved on-to-off current ratio | Chih-Hsin Ko | 2014-03-18 |
| 8674408 | Reducing source/drain resistance of III-V based transistors | Chih-Hsin Ko | 2014-03-18 |
| 8629012 | Method for forming antimony-based FETs monolithically | Heng-Kuang Lin, Pei-Chin Chiu, Jen-Inn Chyi, Han-Chieh Ho, Chih-Hsin Ko +1 more | 2014-01-14 |
| 8629040 | Methods for epitaxially growing active regions between STI regions | Kai-Tai Chang, Yi-Shan Chen, Hsin-Chih Chen, Chih-Hsin Ko | 2014-01-14 |
| 8629478 | Fin structure for high mobility multiple-gate transistor | Chih-Hsin Ko | 2014-01-14 |
| 8623718 | Tilt implantation for forming FinFETs | Feng Yuan, Tsung-Lin Lee, Shao-Ming Yu | 2014-01-07 |
| 8617976 | Source/drain re-growth for manufacturing III-V based transistors | Chih-Hsin Ko | 2013-12-31 |
| 8618556 | FinFET design and method of fabricating same | Cheng-Hsien Wu, Chih-Hsin Ko, Yao-Tsung Huang | 2013-12-31 |
| 8621406 | System and methods for converting planar design to FinFET design | Cheok-Kei Lei, Yi-Tang Lin, Hsiao-Hui Chen, Yu-Ning Chang, Shu-Yu Chen +2 more | 2013-12-31 |
| 8609517 | MOCVD for growing III-V compound semiconductors on silicon substrates | Chih-Hsin Ko, Cheng-Hsien Wu | 2013-12-17 |
| 8609518 | Re-growing source/drain regions from un-relaxed silicon layer | Chih-Hsin Ko, Yao-Tsung Huang, Cheng-Ying Huang | 2013-12-17 |
| 8603924 | Methods of forming gate dielectric material | Liang-Gi Yao, Chia-Cheng Chen | 2013-12-10 |
| 8497201 | Self-assembly pattern for semiconductor integrated circuit | Tsung-Lin Lee, Ching-Yu Chang | 2013-07-30 |
| 8486770 | Method of forming CMOS FinFET device | Cheng-Hsien Wu, Chih-Hsin Ko | 2013-07-16 |
| 8470659 | Method for reducing interfacial layer thickness for high-k and metal gate stack | Liang-Gi Yao, Chun-Hu Cheng, Chen-Yi Lee, Jeff J. Xu | 2013-06-25 |
| 8455860 | Reducing source/drain resistance of III-V based transistors | Chih-Hsin Ko | 2013-06-04 |
| 8455929 | Formation of III-V based devices on semiconductor substrates | Chih-Hsin Ko | 2013-06-04 |
| 8426890 | Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces | Cheng-Hsien Wu, Chih-Hsin Ko | 2013-04-23 |
| 8375349 | Method for constant power density scaling | — | 2013-02-12 |
| 8334570 | Metal gate stress film for mobility enhancement in FinFET device | Jeff J. Xu, Chi Cheh Yeh, Chi Chang | 2012-12-18 |
| 8268683 | Method for reducing interfacial layer thickness for high-K and metal gate stack | Liang-Gi Yao, Chun-Hu Cheng, Chen-Yi Lee, Jeff J. Xu | 2012-09-18 |
| 8264032 | Accumulation type FinFET, circuits and fabrication method thereof | Chih Chieh Yeh, Chih-Sheng Chang | 2012-09-11 |
| 8264021 | Finfets and methods for forming the same | Li-Shyue Lai, Tsz-Mei Kwok, Chih Chieh Yeh | 2012-09-11 |
| 8253167 | Method for forming antimony-based FETs monolithically | Heng-Kuang Lin, Pei-Chin Chiu, Jen-Inn Chyi, Han-Chieh Ho, Chih-Hsin Ko +1 more | 2012-08-28 |