CT

Che-Hao Tu

TSMC: 15 patents #2,074 of 12,232Top 20%
Overall (All Time): #311,841 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Showing 1–15 of 15 patents

Patent #TitleCo-InventorsDate
12128455 Electrical cleaning tool for wafer polishing tool system Chih-Wen Liu, Yeo-Sin Lin, Shu-Wei Hsu, Hui-Chi Huang, Kei-Wei Chen 2024-10-29
12068196 Forming gate line-end of semiconductor structures with improved metal gate height Che-Liang Chung, Kei-Wei Chen, Chih-Wen Liu, You-Shiang Lin, Yi-Ching Liang 2024-08-20
11951587 Zone-based CMP target control Che-Liang Chung, Kei-Wei Chen, Chih-Wen Liu 2024-04-09
11854821 Hard mask removal method William Weilun Hong, Ying-Tsung Chen 2023-12-26
10971370 Hard mask removal method William Weilun Hong, Ying-Tsung Chen 2021-04-06
10943822 Forming gate line-end of semiconductor structures Che-Liang Chung, Kei-Wei Chen, Chih-Wen Liu, You-Shiang Lin, Yi-Ching Liang 2021-03-09
10800004 System and method of chemical mechanical polishing Chih-Wen Liu, Hao-Yun Cheng, Kei-Wei Chen 2020-10-13
10510552 Hard mask removal method William Weilun Hong, Ying-Tsung Chen 2019-12-17
9960050 Hard mask removal method William Weilun Hong, Ying-Tsung Chen 2018-05-01
9941109 Surface treatment in a chemical mechanical process Chih-Wen Liu, Po-Chin Nien, William Weilun Hong, Ying-Tsung Chen 2018-04-10
9922837 Asymmetric application of pressure to a wafer during a CMP process Chih-Wen Liu, Po-Chin Nien, William Weilun Hong, Ying-Tsung Chen 2018-03-20
9711374 Mechanisms for forming oxide layer over exposed polysilicon during a chemical mechanical polishing (CMP) process Chih-Yu Chang, William Weilun Hong, Ying-Tsung Chen 2017-07-18
9595450 Composite structure for gate level inter-layer dielectric William Weilun Hong, Ying-Tsung Chen 2017-03-14
8975179 Planarization process for semiconductor device fabrication Weilun Hong, Ying-Tsung Chen, Liang-Guang Chen 2015-03-10
8598028 Gate height loss improvement for a transistor Chi-Jen Liu, Tzu-Chung Wang, Weilun Hong, Ying-Tsung Chen, Liang-Guang Chen 2013-12-03