AL

Anthony J. Lochtefeld

TSMC: 73 patents #423 of 12,232Top 4%
AS Amberwave Systems: 35 patents #3 of 20Top 15%
QR Qromis: 1 patents #7 of 12Top 60%
Micron: 1 patents #4,761 of 6,345Top 80%
📍 Ipswich, MA: #1 of 208 inventorsTop 1%
🗺 Massachusetts: #180 of 88,656 inventorsTop 1%
Overall (All Time): #11,104 of 4,157,543Top 1%
114
Patents All Time

Issued Patents All Time

Showing 101–114 of 114 patents

Patent #TitleCo-InventorsDate
7138649 Dual-channel CMOS transistors with differentially strained channels Matthew T. Currie, Eugene A. Fitzgerald 2006-11-21
7122449 Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Thomas A. Langdo 2006-10-17
7109516 Strained-semiconductor-on-insulator finFET device structures Thomas A. Langdo, Matthew T. Currie, Glyn Braithwaite, Richard Hammond, Eugene A. Fitzgerald 2006-09-19
7074623 Methods of forming strained-semiconductor-on-insulator finFET device structures Thomas A. Langdo, Richard Hammond, Matthew T. Currie, Glyn Braithwaite, Eugene A. Fitzgerald 2006-07-11
7074655 Gate material for semiconductor device fabrication Dimitri Antoniadis, Matthew T. Currie 2006-07-11
7071014 Methods for preserving strained semiconductor substrate layers during CMOS processing Matthew T. Currie 2006-07-04
6995430 Strained-semiconductor-on-insulator device structures Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Eugene A. Fitzgerald 2006-02-07
6991972 Gate material for semiconductor device fabrication Dimitri Antoniadis, Matthew T. Currie 2006-01-31
6960781 Shallow trench isolation process Matthew T. Currie 2005-11-01
6946371 Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Thomas A. Langdo 2005-09-20
6891209 Dynamic random access memory trench capacitors Mayank Bulsara, Matthew T. Currie 2005-05-10
6849508 Method of forming multiple gate insulators on a strained semiconductor heterostructure Mayank Bulsara 2005-02-01
6838728 Buried-channel devices and substrates for fabrication of semiconductor-based devices Eugene A. Fitzgerald 2005-01-04
6831292 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Richard Hammond, Eugene A. Fitzgerald 2004-12-14