AL

Anthony J. Lochtefeld

TSMC: 73 patents #423 of 12,232Top 4%
AS Amberwave Systems: 35 patents #3 of 20Top 15%
QR Qromis: 1 patents #7 of 12Top 60%
Micron: 1 patents #4,761 of 6,345Top 80%
📍 Ipswich, MA: #1 of 208 inventorsTop 1%
🗺 Massachusetts: #180 of 88,656 inventorsTop 1%
Overall (All Time): #11,104 of 4,157,543Top 1%
114
Patents All Time

Issued Patents All Time

Showing 51–75 of 114 patents

Patent #TitleCo-InventorsDate
8629446 Devices formed from a non-polar plane of a crystalline material and method of making the same 2014-01-14
8629477 Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo 2014-01-14
8628989 Tri-gate field-effect transistors formed by aspect ration trapping 2014-01-14
8624319 Inducement of strain in a semiconductor layer James Fiorenza, Mark Carroll 2014-01-07
8586452 Methods for forming semiconductor device structures Thomas A. Langdo, Richard Hammond, Matthew T. Currie, Eugene A. Fitzgerald 2013-11-19
8519436 Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo 2013-08-27
8502263 Light-emitter-based devices with lattice-mismatched semiconductor structures Jizhong Li 2013-08-06
8441055 Methods for forming strained channel dynamic random access memory devices Mayank Bulsara, Matthew T. Currie 2013-05-14
8384196 Formation of devices by epitaxial layer overgrowth Zhiyuan Cheng, James Fiorenza, Jennifer M. Hydrick, Ji-Soo Park, Jie Bai +1 more 2013-02-26
8344355 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Richard Hammond, Eugene A. Fitzgerald 2013-01-01
8344242 Multi-junction solar cells James Fiorenza 2013-01-01
8324660 Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo 2012-12-04
8309986 Tri-gate field-effect transistors formed by aspect ratio trapping 2012-11-13
8304805 Semiconductor diodes fabricated by aspect ratio trapping with coalesced films 2012-11-06
8253181 Strained channel dynamic random access memory devices Mayank Bulsara, Matthew T. Currie 2012-08-28
8253211 Semiconductor sensor structures with reduced dislocation defect densities Zhiyuan Cheng, James Fiorenza, Calvin Wade Sheen 2012-08-28
8237151 Diode-based devices and methods for making the same 2012-08-07
8173551 Defect reduction using aspect ratio trapping Jie Bai, Ji-Soo Park 2012-05-08
8106380 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Richard Hammond, Eugene A. Fitzgerald 2012-01-31
8034697 Formation of devices by epitaxial layer overgrowth James Fiorenza, Jie Bai, Ji-Soo Park, Jennifer M. Hydrick, Jizhong Li +1 more 2011-10-11
8026534 III-V semiconductor device structures Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Eugene A. Fitzgerald 2011-09-27
7977706 Tri-gate field-effect transistors formed by aspect ratio trapping 2011-07-12
7897493 Inducement of strain in a semiconductor layer James Fiorenza, Mark Carroll 2011-03-01
7884353 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Richard Hammond, Eugene A. Fitzgerald 2011-02-08
7846802 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Richard Hammond, Eugene A. Fitzgerald 2010-12-07