Issued Patents All Time
Showing 101–125 of 197 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8183071 | Method for producing nitride semiconductor optical device and epitaxial wafer | Katsushi Akita, Yohei Enya, Takashi Kyono, Takamichi Sumitomo, Yusuke Yoshizumi +1 more | 2012-05-22 |
| 8175129 | Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove | Yusuke Yoshizumi, Shimpei Takagi, Takatoshi Ikegami, Koji Katayama | 2012-05-08 |
| 8174035 | Nitride-based semiconductor light emitting device | Takamichi Sumitomo, Takashi Kyono, Yohei Enya, Yusuke Yoshizumi | 2012-05-08 |
| 8173458 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element | Yohei Enya, Yusuke Yoshizumi, Fumitake Nakanishi | 2012-05-08 |
| 8168516 | Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate | — | 2012-05-01 |
| 8153454 | Fabrication apparatus and fabrication method of semiconductor device produced by heating substrate | Toshio Ueda, Yoko Watanabe | 2012-04-10 |
| 8148716 | Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device | Yohei Enya, Takashi Kyono, Yusuke Yoshizumi | 2012-04-03 |
| 8139619 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device | Shimpei Takagi, Yusuke Yoshizumi, Koji Katayama, Takatoshi Ikegami | 2012-03-20 |
| 8107507 | Group III nitride semiconductor element and epitaxial wafer | Yusuke Yoshizumi, Yohei Enya, Fumitake Nakanishi | 2012-01-31 |
| 8105857 | Method of fabricating group-III nitride semiconductor laser device | Shimpei Takagi, Yusuke Yoshizumi, Koji Katayama, Takatoshi Ikegami | 2012-01-31 |
| 8076167 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device | Shimpei Takagi, Yusuke Yoshizumi, Koji Katayama, Takatoshi Ikegami | 2011-12-13 |
| 8071405 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device | Shimpei Takagi, Yusuke Yoshizumi, Koji Katayama, Takatoshi Ikegami | 2011-12-06 |
| 8067257 | Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device | Yohei Enya, Takashi Kyono, Katsushi Akita, Yusuke Yoshizumi, Takamichi Sumitomo +1 more | 2011-11-29 |
| 8053806 | Group III nitride semiconductor device and epitaxial substrate | Takashi Kyono, Yusuke Yoshizumi, Yohei Enya, Katsushi Akita, Takamichi Sumitomo +1 more | 2011-11-08 |
| 8048702 | Method of fabricating nitride-based semiconductor optical device | Yohei Enya, Yusuke Yoshizumi, Takashi Kyono, Katsushi Akita | 2011-11-01 |
| 8018029 | Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer | Yusuke Yoshizumi, Takao Nakamura | 2011-09-13 |
| 8002892 | Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device | Ryu Hirota, Seiji Nakahata | 2011-08-23 |
| 7955881 | Method of fabricating quantum well structure | Katsushi Akita, Takamichi Sumitomo, Yohei Enya, Takashi Kyono | 2011-06-07 |
| 7933303 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device | Yusuke Yoshizumi, Yohei Enya, Takashi Kyono, Masahiro Adachi, Katsushi Akita +5 more | 2011-04-26 |
| 7919831 | Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrate | Kensaku Motoki | 2011-04-05 |
| 7887123 | Front body structure of automotive vehicle | Hiromasa Honji, Sakayu Terada, Michinari WATANABE | 2011-02-15 |
| 7883915 | Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser | Takashi Kyono | 2011-02-08 |
| 7883996 | Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate | — | 2011-02-08 |
| 7879636 | Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer | Yusuke Yoshizumi, Takao Nakamura | 2011-02-01 |
| 7873088 | Group III nitride semiconductor element and epitaxial wafer | Yusuke Yoshizumi, Yohei Enya, Fumitake Nakanishi | 2011-01-18 |