Issued Patents All Time
Showing 26–50 of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8476721 | Magnet-assisted transistor devices | Yang Li, Harry Hongyue Liu, Song S. Xue, Shuiyuan Huang, Michael Xuefei Tang | 2013-07-02 |
| 8446752 | Programmable metallization cell switch and memory units containing the same | Ming Sun, Nurul Amin, Young-Pil Kim, Chulmin Jung, Venugopalan Vaithyanathan +2 more | 2013-05-21 |
| 8421048 | Non-volatile memory with active ionic interface region | Venugopalan Vaithyanathan, Markus Jan Peter Siegert, Wei Tian, Muralikrishnan Balakrishnan | 2013-04-16 |
| 8400825 | Magnetic field assisted stram cells | Xiaobin Wang, Haiwen Xi, Hongyue Liu, Andreas Roelofs, Eileen Yan +1 more | 2013-03-19 |
| 8367464 | Nano-dimensional non-volatile memory cells | Venugopalan Vaithyanathan, Wei Tian | 2013-02-05 |
| 8363450 | Hierarchical cross-point array of non-volatile memory | Chulmin Jung, Yong Lu, YoungPil Kim, Harry Hongyue Liu | 2013-01-29 |
| 8343801 | Method of forming a programmable metallization memory cell | Ming Sun, Michael Xuefei Tang, Venkatram Venkatasamy, Philip G. Pitcher, Nurul Amin | 2013-01-01 |
| 8289751 | Non-volatile memory cell with programmable unipolar switching element | Wei Tian, Nurul Amin, Ming Sun, Venu Vaithyanathan, YoungPil Kim +1 more | 2012-10-16 |
| 8288753 | Programmable resistive memory cell with oxide layer | Ming Sun, Michael Xuefei Tang, Venkatram Venkatasamy, Philip G. Pitcher, Nurul Amin | 2012-10-16 |
| 8288749 | Schottky diode switch and memory units containing the same | Young-Pil Kim, Nurul Amin, Dadi Setiadi, Venugopalan Vaithyanathan, Wei Tian | 2012-10-16 |
| 8248836 | Non-volatile memory cell stack with dual resistive elements | YoungPil Kim, Ming Sun, Chulmin Jung, Venugopalan Vaithyanathan, Nurul Amin +2 more | 2012-08-21 |
| 8223560 | Magnetic floating gate memory | Yang Li, Hongyue Liu, Song S. Xue | 2012-07-17 |
| 8223532 | Magnetic field assisted STRAM cells | Xiaobin Wang, Haiwen Xi, Hongyue Liu, Andreas Roelofs, Eileen Yan +1 more | 2012-07-17 |
| 8203865 | Non-volatile memory cell with non-ohmic selection layer | Wei Tian, Venugopalan Vaithyanathan, Haiwen Xi, Michael Xuefei Tang, Brian Lee | 2012-06-19 |
| 8203894 | Current cancellation for non-volatile memory | Chulmin Jung, YoungPil Kim, Yong Lu, Harry Hongyue Liu, Andrew John Carter | 2012-06-19 |
| 8197953 | Magnetic stack design | Haiwen Xi, Antoine Khoueir, Brian Lee, Pat J. Ryan, Michael Xuefei Tang +1 more | 2012-06-12 |
| 8198181 | Schottky diode switch and memory units containing the same | Young-Pil Kim, Nurul Amin, Dadi Setiadi, Venugopalan Vaithyanathan, Wei Tian | 2012-06-12 |
| 8188558 | ST-RAM magnetic element configurations to reduce switching current | Dexin Wang, Dimitar V. Dimitrov, Song S. Xue | 2012-05-29 |
| 8178864 | Asymmetric barrier diode | Wei Tian, Venugopalan Vaithyanathan, Cedric Bedoya, Markus Jan Peter Siegert | 2012-05-15 |
| 8158964 | Schottky diode switch and memory units containing the same | Young-Pil Kim, Nurul Amin, Dadi Setiadi, Venugopalan Vaithyanathan, Wei Tian | 2012-04-17 |
| 8124952 | Programmable resistive memory cell with filament placement structure | Christina Hutchinson, Richard Larson, Lance E. Stover, Jaewoo Nam, Andrew David Habermas | 2012-02-28 |
| 8124441 | Programmable resistive memory cell with filament placement structure | Christina Hutchinson, Richard Larson, Lance E. Stover, Jaewoo Nam, Andrew David Habermas | 2012-02-28 |
| 8097870 | Memory cell with alignment structure | Christina Hutchinson, Lance E. Stover | 2012-01-17 |
| 8098507 | Hierarchical cross-point array of non-volatile memory | Chulmin Jung, Yong Lu, YoungPil Kim, Harry Hongyue Liu | 2012-01-17 |
| 8058646 | Programmable resistive memory cell with oxide layer | Ming Sun, Michael Xuefei Tang, Venkatram Venkatasamy, Philip G. Pitcher, Nurul Amin | 2011-11-15 |