Issued Patents All Time
Showing 26–45 of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10203744 | Display apparatus and method for controlling power usage of the display apparatus | Quanhua He, Hao Zhang, Lingyun Shi, Guangquan Wang, Jian Bo | 2019-02-12 |
| 9739451 | Alignment device and alignment method | Jinshan Liu, Liguang Deng, Quanhua He | 2017-08-22 |
| 9690409 | Touch three-dimensional grating and display device | Shengji Yang, Xue Dong, Haisheng Wang, Yang Pei, Wei Li | 2017-06-27 |
| 9570657 | LED that has bounding silicon-doped regions on either side of a strain release layer | Yi-Min Fu | 2017-02-14 |
| 9305935 | Multi-level contact to a 3D memory array and method of making | Yao-Sheng Lee, Syo Fukata | 2016-04-05 |
| 9230905 | Trench multilevel contact to a 3D memory array and method of making thereof | Seje Takaki, Michiaki Sano | 2016-01-05 |
| 9159869 | LED on silicon substrate using zinc-sulfide as buffer layer | — | 2015-10-13 |
| 9012939 | N-type gallium-nitride layer having multiple conductive intervening layers | Yi-Min Fu | 2015-04-21 |
| 8994099 | Multi-level contact to a 3D memory array and method of making | Yao-Sheng Lee, Syo Fukata | 2015-03-31 |
| 8994064 | Led that has bounding silicon-doped regions on either side of a strain release layer | Yi-Min Fu | 2015-03-31 |
| 8865565 | LED having a low defect N-type layer that has grown on a silicon substrate | — | 2014-10-21 |
| 8828884 | Multi-level contact to a 3D memory array and method of making | Yao-Sheng Lee, Syo Fukata | 2014-09-09 |
| 8686430 | Buffer layer for GaN-on-Si LED | — | 2014-04-01 |
| 8669585 | LED that has bounding silicon-doped regions on either side of a strain release layer | Yi-Min Fu | 2014-03-11 |
| 8653503 | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys | Roy B. Chung, James S. Speck, Steven P. DenBaars, Shuji Nakamura | 2014-02-18 |
| 8395165 | Laterally contacted blue LED with superlattice current spreading layer | William Fenwick, Steve Lester | 2013-03-12 |
| 8395167 | External light efficiency of light emitting diodes | Xuejun Kang, Tien Khee NG, Jenny T. Lam, Shu Yuan | 2013-03-12 |
| 8357925 | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys | Roy B. Chung, James S. Speck, Steven P. DenBaars, Shuji Nakamura | 2013-01-22 |
| 8120012 | Group III nitride white light emitting diode | Soo Jin Chua, Peng Chen, Eiryo Takasuka | 2012-02-21 |
| 8084763 | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys | Roy B. Chung, James S. Speck, Steven P. DenBaars, Shuji Nakamura | 2011-12-27 |