Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12412819 | Electronic package and manufacturing method thereof | Chi-Ching Ho, Cheng-Yu Kang, Yu-Po Wang | 2025-09-09 |
| 12412820 | Electronic package and manufacturing method thereof | Chi-Ching Ho, Cheng-Yu Kang, Yu-Po Wang | 2025-09-09 |
| 12334452 | Electronic package and manufacturing method thereof | Chao Pu, Chi-Ching Ho, Yu-Po Wang, Fang-Lin Tsai | 2025-06-17 |
| 12199047 | Electronic package and manufacturing method thereof | Chao Pu, Chi-Ching Ho, Yu-Po Wang, Po-Yuan Su | 2025-01-14 |
| 12176291 | Electronic package and manufacturing method thereof | Chao Pu, Chi-Ching Ho, Yu-Po Wang, Shuai Liu | 2024-12-24 |
| 12051641 | Electronic package and manufacturing method thereof | Chi-Ching Ho, Cheng-Yu Kang, Yu-Po Wang | 2024-07-30 |
| 10396021 | Fabrication method of layer structure for mounting semiconductor device | Fang-Lin Tsai, Yi-Feng Chang, Cheng-Jen Liu, Hung-Chi Chen | 2019-08-27 |
| 9972564 | Layer structure for mounting semiconductor device and fabrication method thereof | Fang-Lin Tsai, Yi-Feng Chang, Cheng-Jen Liu, Hung-Chi Chen | 2018-05-15 |
| 9570657 | LED that has bounding silicon-doped regions on either side of a strain release layer | Zhen Chen | 2017-02-14 |
| 9012939 | N-type gallium-nitride layer having multiple conductive intervening layers | Zhen Chen | 2015-04-21 |
| 8994064 | Led that has bounding silicon-doped regions on either side of a strain release layer | Zhen Chen | 2015-03-31 |
| 8669585 | LED that has bounding silicon-doped regions on either side of a strain release layer | Zhen Chen | 2014-03-11 |