Issued Patents All Time
Showing 26–43 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8373150 | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same | April D. Schricker, Brad Herner | 2013-02-12 |
| 8268678 | Diode array and method of making thereof | Steven Maxwell, Michael Konevecki, Usha Raghuram | 2012-09-18 |
| 8236623 | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same | April D. Schricker, Brad Herner | 2012-08-07 |
| 8173486 | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same | April D. Schricker, S. Brad Herner | 2012-05-08 |
| 8102694 | Nonvolatile memory device containing carbon or nitrogen doped diode | S. Brad Herner, Tanmay Kumar | 2012-01-24 |
| 8072791 | Method of making nonvolatile memory device containing carbon or nitrogen doped diode | S. Brad Herner, Tanmay Kumar | 2011-12-06 |
| 8049104 | Intermetal stack for use in a photovoltaic cell | S. Brad Herner | 2011-11-01 |
| 7994064 | Selective etch for damage at exfoliated surface | S. Brad Herner, Mohamed M. Hilali | 2011-08-09 |
| 7977667 | Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same | April D. Schricker | 2011-07-12 |
| 7935594 | Damascene process for carbon memory element with MIIM diode | April D. Schricker, Deepak C. Sekar, Andy Fu | 2011-05-03 |
| 7902537 | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same | April D. Schricker, Brad Herner | 2011-03-08 |
| 7897453 | Dual insulating layer diode with asymmetric interface state and method of fabrication | Xiying Chen, Deepak C. Sekar, Dat Nguyen, Tanmay Kumar | 2011-03-01 |
| 7846782 | Diode array and method of making thereof | Steven Maxwell, Michael Konevecki, Usha Raghuram | 2010-12-07 |
| 7824956 | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same | April D. Schricker, Brad Herner | 2010-11-02 |
| 7615439 | Damascene process for carbon memory element with MIIM diode | April D. Schricker, Deepak C. Sekar, Andy Fu | 2009-11-10 |
| 7419701 | Low-temperature, low-resistivity heavily doped p-type polysilicon deposition | S. Brad Herner | 2008-09-02 |
| 6960794 | Formation of thin channels for TFT devices to ensure low variability of threshold voltages | Andrew J. Walker, S. Brad Herner, Maitreyee Mahajani, En-Hsing Chen, Roy E. Scheuerlein +1 more | 2005-11-01 |
| 6815077 | Low temperature, low-resistivity heavily doped p-type polysilicon deposition | S. Brad Herner | 2004-11-09 |