JL

Jooho LEE

Samsung: 43 patents #2,389 of 75,807Top 4%
IBM: 5 patents #18,733 of 70,183Top 30%
ND Ndsp: 2 patents #3 of 7Top 45%
CU Cornell University: 1 patents #786 of 1,984Top 40%
TM Tmaxdataco.: 1 patents #20 of 52Top 40%
Overall (All Time): #37,171 of 4,157,543Top 1%
61
Patents All Time

Issued Patents All Time

Showing 25 most recent of 61 patents

Patent #TitleCo-InventorsDate
12414313 High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same Jeonggyu SONG, Younsoo Kim, Narae HAN 2025-09-09
12408353 Device with dielectric metal oxide layers and semiconductor apparatus including the same Narae HAN, Jeonggyu SONG, Yongsung Kim, Eunae Cho 2025-09-02
12398275 Group V element-containing film compositions and vapor deposition of Group V element-containing film Wontae Noh 2025-08-26
12371787 Method of forming dielectric films, new precursors and their use in the semi-conductor manufacturing Daehyeon Kim, Wontae Noh 2025-07-29
12356643 Capacitor, memory device including the capacitor Changsoo LEE, Jinhong Kim, Yongsung Kim, Jiwoon Park, Yong-Hee Cho 2025-07-08
12349373 Integrated circuit device Kyooho Jung, Jeonggyu SONG, Younsoo Kim 2025-07-01
12312677 Step coverage using an inhibitor molecule for high aspect ratio structures Wontae Noh 2025-05-27
12308365 Thin film structure including method of manufacturing Hyungjun Kim, Changsoo LEE, Yong-Hee Cho, Yongsung Kim 2025-05-20
12276026 Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same Bo-eun Park, Yongsung Kim, Jeonggyu SONG 2025-04-15
12278260 Capacitor and semiconductor device including the same Byunghoon Na, Kiyoung Lee, Myoungho JEONG 2025-04-15
12191348 Capacitors of semiconductor device capable of operating in high frequency operation environment Jaeho Lee, Boeun PARK, Younggeun Park 2025-01-07
12173403 Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films Rocio Alejandra Arteaga Muller, Raphael ROCHAT, Antonio Sanchez, Jean-Marc Girard, Nicolas Blasco +3 more 2024-12-24
12087810 Capacitor and electronic device including the same Jinhong Kim, Changsoo LEE, Yongsung Kim, Euncheol Do, Yong-Hee Cho 2024-09-10
12082395 Semiconductor memory devices and methods of fabricating the same Kyooho Jung, Jeong-Gyu Song, Younsoo Kim 2024-09-03
12071690 Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same Narae HAN, Jeonggyu SONG, Yongsung Kim 2024-08-27
12051717 Anti-ferroelectric thin-film structure and electronic device including the same Boeun PARK, Yongsung Kim, Jeonggyu SONG 2024-07-30
12034036 Semiconductor device and semiconductor apparatus including the same Jeonggyu SONG, Younsoo Kim, Haeryong KIM, Boeun PARK, Eunha LEE +3 more 2024-07-09
11980023 Capacitor, method of controlling the same, and transistor including the same Jaeho Lee, Boeun PARK, Yongsung Kim 2024-05-07
11935916 Dielectric thin-film structure and electronic device including the same Hyangsook LEE, Junghwa KIM, Eunha LEE, Jeonggyu SONG, Myoungho JEONG 2024-03-19
11908887 Capacitor and semiconductor device including the same Jaeho Lee, Boeun PARK, Younggeun Park 2024-02-20
11898244 Plasma-enhanced chemical vapor deposition method of forming lithium-based film by using the same Yongsung Kim, Sanghoon Song, Wooyoung Yang, Changseung LEE, Sungjin Lim +1 more 2024-02-13
11869926 High-k capacitor dielectric having a metal oxide area comprising boron, electrical device, and semiconductor apparatus including the same Jeonggyu SONG, Younsoo Kim, Narae HAN 2024-01-09
11817475 Semiconductor device and semiconductor apparatus including the same Jaeho Lee, Yong-Hee Cho, Seungwoo Jang, Younggeun Park 2023-11-14
11810946 Integrated circuit device including capacitor with metal nitrate interfacial layer Jeonggyu SONG, Kyooho Jung, Younsoo Kim, Haeryong KIM 2023-11-07
11798980 Integrated circuit device and electronic device including capacitor with interfacial layer containing metal element, other element, nitrogen, and oxygen Jeonggyu SONG, Kyooho Jung, Younsoo Kim, Haeryong KIM 2023-10-24