Issued Patents All Time
Showing 1–25 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11718927 | Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or more | Takehiro Yoshida, Masatomo Shibata, Takashi Sato, Naoya Miyoshi, Akishige Murakami | 2023-08-08 |
| 10538858 | Method for manufacturing group 13 nitride crystal and group 13 nitride crystal | Masahiro Hayashi, Takashi Satoh, Naoya Miyoshi, Junichi Wada | 2020-01-21 |
| 10100426 | Method for producing gallium nitride crystal | Takashi Satoh, Masahiro Hayashi, Naoya Miyoshi, Chiharu Kimura, Junichi Wada | 2018-10-16 |
| 9869033 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate | Masahiko Shimada, Hisanori Yamane, Hirokazu Iwata | 2018-01-16 |
| 9863058 | Gallium nitride crystal, group 13 nitride crystal, group 13 nitride crystal substrate, and manufacturing method | Masahiro Hayashi, Takashi Satoh, Hiroshi Nambu, Chiharu Kimura, Naoya Miyoshi | 2018-01-09 |
| 9856575 | Crystal growth apparatus and manufacturing method of group III nitride crystal | Hirokazu Iwata, Akihiro Fuse | 2018-01-02 |
| 9732435 | Group 13 nitride crystal and group 13 nitride crystal substrate | Masahiro Hayashi, Takashi Satoh, Hiroshi Nambu, Chiharu Kimura, Naoya Miyoshi | 2017-08-15 |
| 9404196 | Manufacturing method of group 13 nitride crystal | Masahiro Hayashi, Takashi Satoh, Hiroshi Nambu, Chiharu Kimura, Naoya Miyoshi | 2016-08-02 |
| 9376763 | Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen | Hirokazu Iwata, Minoru Fukuda, Tetsuya Takahashi, Akira Takahashi | 2016-06-28 |
| 9365948 | Group III nitride crystal and manufacturing method thereof | Hirokazu Iwata, Akihiro Fuse | 2016-06-14 |
| 9222199 | Crystal manufacturing apparatus | Hirokazu Iwata | 2015-12-29 |
| 9163325 | Crystal growth apparatus and manufacturing method of group III nitride crystal | Hirokazu Iwata, Akihiro Fuse | 2015-10-20 |
| 9123863 | Group 13 nitride crystal and substrate thereof | Masahiro Hayashi, Takashi Satoh, Hiroshi Nambu, Chiharu Kimura, Naoya Miyoshi | 2015-09-01 |
| 9096950 | Nitride crystal and method for producing the same | Takashi Satoh, Hirokazu Iwata, Yusuke Mori, Yasuo Kitaoka | 2015-08-04 |
| 8888912 | Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal | Hirokazu Iwata, Akihiro Fuse | 2014-11-18 |
| 8829530 | Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate | Hirokazu Iwata | 2014-09-09 |
| 8623138 | Crystal growth apparatus | Hisanori Yamane, Masahiko Shimada, Masafumi Kumano, Hirokazu Iwata, Takashi Araki | 2014-01-07 |
| 8591647 | Production of a GaN bulk crystal substrate and a semiconductor device formed thereon | Masahiko Shimada, Hisanori Yamane, Hirokazu Iwata | 2013-11-26 |
| 8562737 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device | Masahiko Shimada, Hisanori Yamane, Masato Aoki | 2013-10-22 |
| 8475593 | Crystal preparing device, crystal preparing method, and crystal | Hirokazu Iwata, Akihiro Fuse | 2013-07-02 |
| 8337617 | Manufacturing method and manufacturing apparatus of a group III nitride crystal | Hirokazu Iwata, Minoru Fukuda, Tetsuya Takahashi, Akira Takahashi | 2012-12-25 |
| 8337798 | Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate | Hirokazu Iwata | 2012-12-25 |
| 8323404 | Group III nitride crystal and manufacturing method thereof | Hirokazu Iwata, Akihiro Fuse | 2012-12-04 |
| 8129082 | Electrophotographic photoreceptor, image forming method using electrophotographic photoreceptor, image forming apparatus, and process cartridge for image forming apparatus | Tetsuya Toshine | 2012-03-06 |
| 8101020 | Crystal growth apparatus and manufacturing method of group III nitride crystal | Hirokazu Iwata, Akihiro Fuse | 2012-01-24 |