Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Canon › Takehiro Yoshida
TY

Takehiro Yoshida — 290 Patents

Canon: 243 patents #2 of 19,416Top 1%
SCSumitomo Chemical: 22 patents #116 of 4,033Top 3%
SLSciocs Company Limited: 10 patents #2 of 41Top 5%
OLOlympus: 8 patents #598 of 3,097Top 20%
Nichia: 4 patents #472 of 1,531Top 35%
HCHitachi Cable: 4 patents #157 of 1,086Top 15%
OUOsaka University: 3 patents #231 of 1,984Top 15%
Rohm Co.: 3 patents #810 of 2,292Top 40%
Panasonic: 2 patents #9,726 of 21,108Top 50%
OCOlympus Optical Co.: 2 patents #1,178 of 2,334Top 55%
SHShimizu: 1 patents #15 of 53Top 30%
HUHosei University: 1 patents #9 of 25Top 40%
DIDaikin Industries: 1 patents #1,764 of 2,957Top 60%
Tokyo, JP: #17 of 90,295 inventorsTop 1%
Overall (All Time): #1,438 of 4,157,543Top 1%
290 Patents All Time
Takehiro Yoshida has been granted 290 US patents while listed as an inventor at Canon. The first was granted in 1987 and the most recent in August 2025. Takehiro Yoshida ranks #1,438 of 4,157,543 US inventors in our database (top 0.03%). Patent records list Takehiro Yoshida in Tokyo, JP.

Issued Patents All Time

Showing 1–25 of 290 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
12399364 Wearable device, control device, system, control method, and non-transitory computer readable medium Sanae Yamaguchi 2025-08-26
12174132 Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate — 2024-12-24 $17,261,000
12091774 Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate — 2024-09-17 $19,251,000
12071707 Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure — 2024-08-27 $26,513,000
12032163 Wearable device, control device, system, control method, and non- transitory computer readable medium Sanae Yamaguchi 2024-07-09
11970784 Nitride semiconductor substrate, method for manufacturing nitride semiconductor substrate, and laminated structure — 2024-04-30 $26,151,000
11967617 Nitride semiconductor substrate, laminate, substrate selection program, substrate data output program, off-angle coordinate map, and methods thereof Fumimasa Horikiri 2024-04-23 $40,668,000
11908688 Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate and layered structure — 2024-02-20 $26,968,000
11873578 Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate — 2024-01-16 $42,805,000
11718927 Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or more Masatomo Shibata, Seiji Sarayama, Takashi Sato, Naoya Miyoshi, Akishige Murakami 2023-08-08 $22,376,000
11706396 Image processing apparatus that performs processing concerning display of stereoscopic image, image processing method, and storage medium Takumi Uehara, Hiroki Ito, Kunihiro Shirai, Takuma Mikawa, Hiroshi Atobe 2023-07-18
11640906 Crystal laminate, semiconductor device and method for manufacturing the same Fumimasa Horikiri, Tomoyoshi Mishima 2023-05-02 $21,235,000
11339500 Nitride crystal substrate, semiconductor laminate, method of manufacturing semiconductor laminate and method of manufacturing semiconductor device Fumimasa Horikiri 2022-05-24
11339053 Nitride crystal Hajime Fujikura, Taichiro KONNO 2022-05-24
11094539 Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate Fumimasa Horikiri 2021-08-17
11064087 Information processing apparatus, control method, and storage medium for printing Yusuke Shirakawa, Hiroshi Atobe, Yusuke Haruyama 2021-07-13 $43,000
11008671 Nitride crystal Hajime Fujikura, Taichiro KONNO, Takayuki Suzuki, Toshio Kitamura, Tetsuji Fujimoto 2021-05-18
10978296 Nitride semiconductor substrate, semiconductor laminate, laminated structure, method for manufacturing nitride semiconductor substrate and method for manufacturing semiconductor laminate Hajime Fujikura, Masatomo Shibata, Fumimasa Horikiri 2021-04-13
10910026 Clock generation circuit, switching power supply device, and semiconductor device Shun Fukushima 2021-02-02
10683587 Method for manufacturing nitride crystal substrate and nitride crystal laminate — 2020-06-16
10643678 Clock generation circuit, switching power supply device, and semiconductor device Shun Fukushima 2020-05-05
10584031 Nitride crystal substrate Masatomo Shibata 2020-03-10
10309036 Method for manufacturing group-III nitride semiconductor crystal substrate Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masatomo Shibata 2019-06-04
10290489 Method for manufacturing group-III nitride substrate and group-III nitride substrate Toshio Kitamura, Masatomo Shibata 2019-05-14
10266965 Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masashi ISEMURA, Akira Usui +1 more 2019-04-23

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