Issued Patents All Time
Showing 26–38 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7981213 | Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride | Hirokazu Iwata | 2011-07-19 |
| 7828896 | Methods of growing a group III nitride crystal | Hirokazu Iwata, Hisanori Yamane, Masahiko Shimada, Masato Aoki | 2010-11-09 |
| 7718002 | Crystal manufacturing apparatus | Hirokazu Iwata | 2010-05-18 |
| 7531038 | Crystal growth method | Hisanori Yamane, Masahiko Shimada, Masafumi Kumano, Hirokazu Iwata, Takashi Araki | 2009-05-12 |
| 7508003 | Production of a GaN bulk crystal substrate and a semiconductor device formed thereon | Masahiko Shimada, Hisanori Yamane, Hirokazu Iwata | 2009-03-24 |
| 7462238 | Crystal growth apparatus and method of producing a crystal | Hirokazu Iwata, Akihiro Fuse, Kuniaki Ara, Junichi Saito | 2008-12-09 |
| 7261775 | Methods of growing a group III nitride crystal | Hirokazu Iwata, Hisanori Yamane, Masahiko Shimada, Masato Aoki | 2007-08-28 |
| 7250640 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate | Masahiko Shimada, Hisanori Yamane, Hirokazu Iwata | 2007-07-31 |
| 7220311 | Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride | Hirokazu Iwata | 2007-05-22 |
| 7001457 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device | Hisanori Yamane, Masahiko Shimada, Masafumi Kumano, Hirokazu Iwata, Takashi Araki | 2006-02-21 |
| 6949140 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device | Hirokazu Iwata, Masahiko Shimada, Hisanori Yamane, Masato Aoki | 2005-09-27 |
| 6780239 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device | Masahiko Shimada, Hisanori Yamane, Masato Aoki | 2004-08-24 |
| 6592663 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate | Masahiko Shimada, Hisanori Yamane, Hirokazu Iwata | 2003-07-15 |