Issued Patents All Time
Showing 1–25 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11824516 | Piezoelectric device and manufacturing method of the same | Kenji Shimao, Tetsuya Watanabe, Koji Toshikawa | 2023-11-21 |
| 11296275 | Piezoelectric device, piezoelectric vibrating piece, and method for manufacturing piezoelectric vibrating piece | Tetsuya Watanabe, Yoshiharu Sato | 2022-04-05 |
| 11245249 | Reflector, surface emitting laser, method for manufacturing reflector, and method for manufacturing surface emitting laser | Takeshi Kawashima, Shunichi Sato, Morimasa Kaminishi | 2022-02-08 |
| 10840882 | Crystal unit and manufacturing method thereof | Koji Toshikawa, Shinobu Yoshida, Tetsuya Watanabe, Kazuhiro Hirota, Yoshiro TESHIMA | 2020-11-17 |
| 10819307 | Crystal unit and manufacturing method thereof | Yoshiharu Sato, Tetsuya Watanabe, Shinobu Yoshida | 2020-10-27 |
| 10771038 | Crystal unit | Koji Toshikawa, Shinobu Yoshida | 2020-09-08 |
| 10659005 | At-cut crystal element, crystal resonator and crystal unit | Takayuki Kuwahara, Kenji Shimao | 2020-05-19 |
| 10529910 | Piezoelectric device | Yoshiharu Sato | 2020-01-07 |
| 10333489 | Crystal unit | Kenji Shimao, Yoshiharu Sato | 2019-06-25 |
| 10263597 | Crystal unit | Yoshiharu Sato, Kenji Shimao | 2019-04-16 |
| 10250225 | AT-cut crystal element, crystal resonator and crystal unit | Yoshiharu Sato, Yoshiro TESHIMA, Kazuhiro Hirota | 2019-04-02 |
| 9869033 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate | Seiji Sarayama, Masahiko Shimada, Hisanori Yamane | 2018-01-16 |
| 9856575 | Crystal growth apparatus and manufacturing method of group III nitride crystal | Seiji Sarayama, Akihiro Fuse | 2018-01-02 |
| 9464367 | Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate | — | 2016-10-11 |
| 9376763 | Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen | Seiji Sarayama, Minoru Fukuda, Tetsuya Takahashi, Akira Takahashi | 2016-06-28 |
| 9365948 | Group III nitride crystal and manufacturing method thereof | Seiji Sarayama, Akihiro Fuse | 2016-06-14 |
| 9222199 | Crystal manufacturing apparatus | Seiji Sarayama | 2015-12-29 |
| 9163325 | Crystal growth apparatus and manufacturing method of group III nitride crystal | Seiji Sarayama, Akihiro Fuse | 2015-10-20 |
| 9096950 | Nitride crystal and method for producing the same | Takashi Satoh, Seiji Sarayama, Yusuke Mori, Yasuo Kitaoka | 2015-08-04 |
| 8888912 | Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal | Seiji Sarayama, Akihiro Fuse | 2014-11-18 |
| 8858908 | Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate | — | 2014-10-14 |
| 8829530 | Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate | Seiji Sarayama | 2014-09-09 |
| 8623138 | Crystal growth apparatus | Seiji Sarayama, Hisanori Yamane, Masahiko Shimada, Masafumi Kumano, Takashi Araki | 2014-01-07 |
| 8591647 | Production of a GaN bulk crystal substrate and a semiconductor device formed thereon | Seiji Sarayama, Masahiko Shimada, Hisanori Yamane | 2013-11-26 |
| 8554160 | AM transmitter and modulation method using same | Shin-ichi Matsuo, Fuminori Kinugawa | 2013-10-08 |