Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10011768 | Phosphor, light-emitting device, illumination device and image display device | Fumitaka Yoshimura | 2018-07-03 |
| 9869033 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate | Seiji Sarayama, Masahiko Shimada, Hirokazu Iwata | 2018-01-16 |
| 9590939 | Mail server, mail transmitting/receiving method, and mail transmitting/receiving program | — | 2017-03-07 |
| 9255010 | Boride having chemical composition Na—Si—B, and polycrystalline reaction sintered product of boride and process for production thereof | Haruhiko Morito | 2016-02-09 |
| 8809797 | Scintillator for neutrons and neutron detector | Tetsuya Kawano, Akira Yoshikawa, Takayuki Yanagida, Yui Yokota, Yutaka Fujimoto +2 more | 2014-08-19 |
| 8623138 | Crystal growth apparatus | Seiji Sarayama, Masahiko Shimada, Masafumi Kumano, Hirokazu Iwata, Takashi Araki | 2014-01-07 |
| 8591647 | Production of a GaN bulk crystal substrate and a semiconductor device formed thereon | Seiji Sarayama, Masahiko Shimada, Hirokazu Iwata | 2013-11-26 |
| 8562737 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device | Seiji Sarayama, Masahiko Shimada, Masato Aoki | 2013-10-22 |
| 7828896 | Methods of growing a group III nitride crystal | Hirokazu Iwata, Seiji Sarayama, Masahiko Shimada, Masato Aoki | 2010-11-09 |
| 7531038 | Crystal growth method | Seiji Sarayama, Masahiko Shimada, Masafumi Kumano, Hirokazu Iwata, Takashi Araki | 2009-05-12 |
| 7508003 | Production of a GaN bulk crystal substrate and a semiconductor device formed thereon | Seiji Sarayama, Masahiko Shimada, Hirokazu Iwata | 2009-03-24 |
| 7261775 | Methods of growing a group III nitride crystal | Hirokazu Iwata, Seiji Sarayama, Masahiko Shimada, Masato Aoki | 2007-08-28 |
| 7250640 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate | Seiji Sarayama, Masahiko Shimada, Hirokazu Iwata | 2007-07-31 |
| 7001457 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device | Seiji Sarayama, Masahiko Shimada, Masafumi Kumano, Hirokazu Iwata, Takashi Araki | 2006-02-21 |
| 6949140 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device | Seiji Sarayama, Hirokazu Iwata, Masahiko Shimada, Masato Aoki | 2005-09-27 |
| 6780239 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device | Seiji Sarayama, Masahiko Shimada, Masato Aoki | 2004-08-24 |
| 6717048 | Electromagnetic shielding plate and method for producing the same | Kayoko Ueda, Yasuhiko Kondo, Makoto Sugiya | 2004-04-06 |
| 6592663 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate | Seiji Sarayama, Masahiko Shimada, Hirokazu Iwata | 2003-07-15 |
| 5868837 | Low temperature method of preparing GaN single crystals | Francis J. DiSalvo, Jay Molstad | 1999-02-09 |
| 5145720 | Chemical vapor deposition of dense and transparent zirconia films | Toshio Hirai | 1992-09-08 |
| 4985117 | Method of manufacturing josephson junctions | Hideyuki Kurosawa, Toshio Hirai, Tsutomu Yamashita | 1991-01-15 |
| 4920014 | Zirconia film and process for preparing it | Toshio Hirai | 1990-04-24 |