AF

Akihiro Fuse

Ricoh Company: 13 patents #1,714 of 9,818Top 20%
IC Iwaki Co.: 1 patents #24 of 53Top 50%
JA Japan Atomic Energy Agency: 1 patents #64 of 251Top 30%
📍 Rifu, JP: #239 of 2,101 inventorsTop 15%
Overall (All Time): #348,314 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
9856575 Crystal growth apparatus and manufacturing method of group III nitride crystal Seiji Sarayama, Hirokazu Iwata 2018-01-02
9365948 Group III nitride crystal and manufacturing method thereof Hirokazu Iwata, Seiji Sarayama 2016-06-14
9163325 Crystal growth apparatus and manufacturing method of group III nitride crystal Seiji Sarayama, Hirokazu Iwata 2015-10-20
8888912 Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal Seiji Sarayama, Hirokazu Iwata 2014-11-18
8552720 Mobile information terminal apparatus and magnetic sensor, including magnetoresistive detecting device Futoyoshi Kou, Junichi Azumi 2013-10-08
8475593 Crystal preparing device, crystal preparing method, and crystal Hirokazu Iwata, Seiji Sarayama 2013-07-02
8323404 Group III nitride crystal and manufacturing method thereof Hirokazu Iwata, Seiji Sarayama 2012-12-04
8134361 Magnetic sensor including magnetic field detectors and field resistors arranged on inclined surfaces Junichi Azumi, Futoyoshi Kou 2012-03-13
8101020 Crystal growth apparatus and manufacturing method of group III nitride crystal Seiji Sarayama, Hirokazu Iwata 2012-01-24
7743519 Sensor module, method of correction therefor, and mobile object including the sensor module Futoyoshi Kou 2010-06-29
7462238 Crystal growth apparatus and method of producing a crystal Seiji Sarayama, Hirokazu Iwata, Kuniaki Ara, Junichi Saito 2008-12-09
5933756 Fabrication process of a semiconductor device having a multilayered interconnection structure 1999-08-03
5330330 Electromagnetically operated fixed displacement pump Fukuji Kuwabara, Hiroshi Iizuka, Akira Ogasawara 1994-07-19
4792510 Electrophotographic element with silicide treated porous Al.sub.2 O.sub.3 sublayer Masafumi Kumano, Yasuyuki Shindoh, Yutaka Sano, Koichi Haga 1988-12-20