Issued Patents All Time
Showing 51–75 of 153 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9349431 | Systems and methods to refresh storage elements | Mosaddiq Saifuddin | 2016-05-24 |
| 9336847 | Method and apparatus for generating a reference for use with a magnetic tunnel junction | Sungryul Kim, Taehyun Kim | 2016-05-10 |
| 9299457 | Kernel masking of DRAM defects | Dexter Tamio Chun, Yanru Li, Xiangyu Dong, Jungwon Suh, Deepti Vijayalakshmi Sriramagiri | 2016-03-29 |
| 9281039 | System and method to provide a reference cell using magnetic tunnel junction cells | Seong-Ook Jung, Taehui Na, Jisu Kim, Seung H. Kang | 2016-03-08 |
| 9275714 | Read operation of MRAM using a dummy word line | Taehyun Kim, Sungryul Kim, Xiangyu Dong | 2016-03-01 |
| 9274715 | Methods and apparatuses for in-system field repair and recovery from memory failures | Dexter Tamio Chun, Jungwon Suh, Stephen Molloy | 2016-03-01 |
| 9274888 | Method and apparatus for multiple-bit DRAM error recovery | Dexter Tamio Chun, Hyunsuk Shin, Jungwon Suh | 2016-03-01 |
| 9262263 | Bit recovery system | Taehyun Kim, Sungryul Kim | 2016-02-16 |
| 9251881 | System and method to trim reference levels in a resistive memory | Taehyun Kim, Sungryul Kim | 2016-02-02 |
| 9245610 | OTP cell with reversed MTJ connection | Taehyun Kim, Kangho Lee, Seung H. Kang, Xia Li, Wah Nam Hsu | 2016-01-26 |
| 9230634 | Refresh scheme for memory cells with next bit table | Jungwon Suh, Xiangyu Dong | 2016-01-05 |
| 9224467 | Resistance-based memory having two-diode access device | Wuyang Hao, Jungwon Suh, Kangho Lee, Taehyun Kim, Seung H. Kang | 2015-12-29 |
| 9196337 | Low sensing current non-volatile flip-flop | Seong-Ook Jung, Youngdon Jung, Kyungho Ryu, Jisu Kim, Seung H. Kang | 2015-11-24 |
| 9196341 | Memory device having a local current sink | Hari M. Rao | 2015-11-24 |
| 9183082 | Error detection and correction of one-time programmable elements | Taehyun Kim, Sungryul Kim | 2015-11-10 |
| 9164729 | Method and apparatus for generating random numbers using a physical entropy source | Wenqing Wu, Peiyuan Wang, Raghu Sagar Madala, Senthil Govindaswamy, Kendrick Hoy Leong Yuen +2 more | 2015-10-20 |
| 9165631 | OTP scheme with multiple magnetic tunnel junction devices in a cell | Taehyun Kim, Sungryul Kim, Kangho Lee | 2015-10-20 |
| 9165630 | Offset canceling dual stage sensing circuit | Seong-Ook Jung, Taehui Na, Jisu Kim, Seung H. Kang | 2015-10-20 |
| 9159381 | Tunable reference circuit | Xia Li, Taehyun Kim | 2015-10-13 |
| 9153307 | System and method to provide a reference cell | Taehyun Kim, Sungryul Kim | 2015-10-06 |
| 9147457 | Reference cell repair scheme | Taehyun Kim, Sungryul Kim | 2015-09-29 |
| 9142278 | Asymmetric write scheme for magnetic bit cell elements | Xiaochun Zhu, Hari M. Rao, Seung H. Kang | 2015-09-22 |
| 9140747 | Sense amplifier offset voltage reduction | Taehyun Kim, Sungryul Kim, Daeik Daniel Kim | 2015-09-22 |
| 9135975 | Write pulse width scheme in a resistive memory | Taehyun Kim, Sungryul Kim | 2015-09-15 |
| 9135974 | Multi-port non-volatile memory that includes a resistive memory element | Hari M. Rao | 2015-09-15 |