AP

Abhijeet Paul

PS Psemi: 15 patents #34 of 166Top 25%
Globalfoundries: 8 patents #444 of 4,424Top 15%
QU Qualcomm: 7 patents #2,597 of 12,104Top 25%
MC Murata Manufacturing Co.: 4 patents #1,804 of 5,295Top 35%
📍 Escondido, CA: #43 of 1,330 inventorsTop 4%
🗺 California: #14,433 of 386,348 inventorsTop 4%
Overall (All Time): #99,932 of 4,157,543Top 3%
34
Patents All Time

Issued Patents All Time

Showing 26–34 of 34 patents

Patent #TitleCo-InventorsDate
10388790 FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming Min-hwa Chi, Ajey Poovannummoottil Jacob 2019-08-20
10319854 High voltage switching device Simon Edward Willard, Alain Duvallet 2019-06-11
10115787 Low leakage FET Simon Edward Willard, Alain Duvallet 2018-10-30
9362277 FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming Min-hwa Chi, Ajey Poovannummoottil Jacob 2016-06-07
9219062 Integrated circuits with improved source/drain contacts and methods for fabricating such integrated circuits Peter M. Zeitzoff 2015-12-22
9117930 Methods of forming stressed fin channel structures for FinFET semiconductor devices Vimal Kamineni, Derya Deniz, Abner Bello, Robert J. Miller, William J. Taylor, Jr. 2015-08-25
9023705 Methods of forming stressed multilayer FinFET devices with alternative channel materials Ajey Poovannummoottil Jacob, Min-hwa Chi 2015-05-05
8975142 FinFET channel stress using tungsten contacts in raised epitaxial source and drain Abner Bello, Vimal Kamineni, Derya Deniz 2015-03-10
8889500 Methods of forming stressed fin channel structures for FinFET semiconductor devices Vimal Kamineni, Derya Deniz, Abner Bello, Robert J. Miller, William J. Taylor, Jr. 2014-11-18