Vikram Kowshik — 25 Patents at Programmable Microelectronics

Vikram Kowshik has been granted 25 US patents while listed as an inventor at Programmable Microelectronics. The first was granted in 1989 and the most recent in May 2025. Vikram Kowshik ranks #158,593 of 4,157,543 US inventors in our database (top 3.8%). Patent records list Vikram Kowshik in Cupertino, CA, US.

Issued Patents All Time

Showing 1–25 of 25 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
12301248	Methods and systems of utilizing analog to digital converter (ADC) for multiply-accumulator (MAC)	Vishal Sarin, Biprangshu Saha, Sankha Saha, Sang Thanh Nguyen, Siraj Fulum Mossa	2025-05-13
11961570	Methods and systems of cell-array programming for neural compute using flash arrays	Vishal Sarin, Purval S. Sule, Siraj Fulum Mossa	2024-04-16
11799489	Temperature compensated common counter ADC method for neural compute	Vishal Sarin, Sankha Saha, Siraj Fulum	2023-10-24
11687765	Method for analog in-memory compute for neural networks	Vishal Sarin, Sankha Saha	2023-06-27
7143257	Method and apparatus of a smart decoding scheme for fast synchronous read in a memory system	Fai Ching, Steven J. Schumann	2006-11-28	$29,421,000
7099226	Functional register decoding system for multiple plane operation	Yolanda Yuan, Jason Guo, Sai K. Tsang, Steven J. Schumann	2006-08-29	$11,208,000
5973967	Page buffer having negative voltage level shifter	Chinh Nguyen, Andy Yu, Vishal Sarin	1999-10-26
5912842	Nonvolatile PMOS two transistor memory cell and array	Shang-De Ted Chang, Andy Yu, Nader Radjy	1999-06-15
5907484	Charge pump	Andy Yu	1999-05-25
5903497	Integrated program verify page buffer	Andy Yu	1999-05-11
5889440	Adaptive frequency compensation technique	—	1999-03-30
5798967	Sensing scheme for non-volatile memories	Vishal Sarin, Andy Yu	1998-08-25
5796656	Row decoder circuit for PMOS non-volatile memory cell which uses electron tunneling for programming and erasing	Andy Yu, Jayson Trinh	1998-08-18
5781471	PMOS non-volatile latch for storage of redundancy addresses	Andy Yu	1998-07-14
5777926	Row decoder circuit for PMOS non-volatile memory cell which uses channel hot electrons for programming	Jayson Trinh, Andy Yu	1998-07-07
5774406	Switching circuit for controlled transition between high program and erase voltages and a power supply voltage for memory cells	—	1998-06-30
5696728	Negative voltage level shift circuit	Andy Yu	1997-12-09
5687116	Programming pulse ramp control circuit	Andy Yu	1997-11-11
5625211	Two-transistor electrically-alterable switch employing hot electron injection and fowler nordheim tunneling	—	1997-04-29	$2,969,000
5625544	Charge pump	Andy Yu	1997-04-29
5587603	Two-transistor zero-power electrically-alterable non-volatile latch	—	1996-12-24	$7,007,000
5576568	Single-transistor electrically-alterable switch employing fowler nordheim tunneling for program and erase	—	1996-11-19	$3,049,000
4975878	Programmable memory data protection scheme	Sudhakar Boddu, Elroy M. Lucero	1990-12-04	$1,667,000
4873671	Sequential read access of serial memories with a user defined starting address	Sudhakar Boddu, Elroy M. Lucero	1989-10-10	$4,029,000
4858185	Zero power, electrically alterable, nonvolatile latch	Elroy M. Lucero	1989-08-15	$2,368,000

Vikram Kowshik — 25 Patents

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