SC

Shang-De Ted Chang

PM Programmable Microelectronics: 13 patents #1 of 20Top 5%
Rohm Co.: 4 patents #677 of 2,292Top 30%
CT Chingis Technology: 3 patents #1 of 15Top 7%
RC Rohn Co.: 1 patents #1 of 19Top 6%
Overall (All Time): #211,204 of 4,157,543Top 6%
21
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
7505325 Low voltage low capacitance flash memory array 2009-03-17
7339229 Nonvolatile memory solution using single-poly pFlash technology Alex Wang, Han-Chih Lin, Tzeng-Huei Shiau, I-Sheng Liu, Hsien-Wen Liu 2008-03-04
7078761 Nonvolatile memory solution using single-poly pFlash technology Alex Wang, Han-Chih Lin, Tzeng-Huei Shiau, I-Sheng Liu, Hsien-Wen Liu 2006-07-18
5966329 Apparatus and method for programming PMOS memory cells Ching-Hsiang Hsu, Nader Radjy 1999-10-12
5940325 Low voltage one transistor flash EEPROM cell using fowler-nordheim programming and erase Jai-Hwang Chang, Edwin Chow 1999-08-17
5912842 Nonvolatile PMOS two transistor memory cell and array Vikram Kowshik, Andy Yu, Nader Radjy 1999-06-15
5909392 PMOS memory array having OR gate architecture Chinh Nguyen, Guy S. Yuen, Chi-Tay Huang 1999-06-01
5841165 PMOS flash EEPROM cell with single poly Jayson Trinh 1998-11-24
5801994 Non-volatile memory array architecture Chinh Nguyen, Guy S. Yuen 1998-09-01
5761121 PMOS single-poly non-volatile memory structure 1998-06-02
5736764 PMOS flash EEPROM cell with single poly 1998-04-07
5723355 Method to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memory Binh Ly 1998-03-03
5706227 Double poly split gate PMOS flash memory cell Jayson Trinh 1998-01-06
5691939 Triple poly PMOS flash memory cell Jayson Trinh 1997-11-25
5689459 Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase Jia-Hwang Chang, Edwin Chow 1997-11-18
5687118 PMOS memory cell with hot electron injection programming and tunnelling erasing 1997-11-11
5687120 Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase Jia-Hwang Chang, Edwin Chow 1997-11-11
5666307 PMOS flash memory cell capable of multi-level threshold voltage storage 1997-09-09
5615147 Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase Jia-Hwang Chang, Edwin Chow 1997-03-25
5587947 Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase Jia-Hwang Chang, Edwin Chow 1996-12-24
5581504 Non-volatile electrically erasable memory with PMOS transistor NAND gate structure 1996-12-03