Shang-De Ted Chang — 21 Patents at Programmable Microelectronics

Shang-De Ted Chang has been granted 21 US patents while listed as an inventor at Programmable Microelectronics. The first was granted in 1996 and the most recent in March 2009. Shang-De Ted Chang ranks #201,324 of 4,157,543 US inventors in our database (top 4.8%). Patent records list Shang-De Ted Chang in Fremont, CA, US.

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Showing 1–21 of 21 patents

Patent #	Title	Co-Inventors	Date
7505325	Low voltage low capacitance flash memory array	—	2009-03-17
7339229	Nonvolatile memory solution using single-poly pFlash technology	Alex Wang, Han-Chih Lin, Tzeng-Huei Shiau, I-Sheng Liu, Hsien-Wen Liu	2008-03-04
7078761	Nonvolatile memory solution using single-poly pFlash technology	Alex Wang, Han-Chih Lin, Tzeng-Huei Shiau, I-Sheng Liu, Hsien-Wen Liu	2006-07-18
5966329	Apparatus and method for programming PMOS memory cells	Ching-Hsiang Hsu, Nader Radjy	1999-10-12
5940325	Low voltage one transistor flash EEPROM cell using fowler-nordheim programming and erase	Jai-Hwang Chang, Edwin Chow	1999-08-17
5912842	Nonvolatile PMOS two transistor memory cell and array	Vikram Kowshik, Andy Yu, Nader Radjy	1999-06-15
5909392	PMOS memory array having OR gate architecture	Chinh Nguyen, Guy S. Yuen, Chi-Tay Huang	1999-06-01
5841165	PMOS flash EEPROM cell with single poly	Jayson Trinh	1998-11-24
5801994	Non-volatile memory array architecture	Chinh Nguyen, Guy S. Yuen	1998-09-01
5761121	PMOS single-poly non-volatile memory structure	—	1998-06-02
5736764	PMOS flash EEPROM cell with single poly	—	1998-04-07
5723355	Method to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memory	Binh Ly	1998-03-03
5706227	Double poly split gate PMOS flash memory cell	Jayson Trinh	1998-01-06
5691939	Triple poly PMOS flash memory cell	Jayson Trinh	1997-11-25
5689459	Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase	Jia-Hwang Chang, Edwin Chow	1997-11-18
5687118	PMOS memory cell with hot electron injection programming and tunnelling erasing	—	1997-11-11
5687120	Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase	Jia-Hwang Chang, Edwin Chow	1997-11-11
5666307	PMOS flash memory cell capable of multi-level threshold voltage storage	—	1997-09-09
5615147	Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase	Jia-Hwang Chang, Edwin Chow	1997-03-25
5587947	Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase	Jia-Hwang Chang, Edwin Chow	1996-12-24
5581504	Non-volatile electrically erasable memory with PMOS transistor NAND gate structure	—	1996-12-03

Shang-De Ted Chang — 21 Patents

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