Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Row decoder circuit for PMOS non-volatile memory cell which uses electron tunneling for programming and erasing

Row decoder circuit for PMOS non-volatile memory cell which uses electron tunneling for programming and erasing

US Patent 5796656 · Granted Aug 18, 1998

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods and systems of utilizing analog to digital converter (ADC) for multiply-2025
Methods and systems of cell-array programming for neural compute using flash arr2024
Temperature compensated common counter ADC method for neural compute2023
Method for analog in-memory compute for neural networks2023
Mini in-line ground fault circuit interrupter2016
Ground fault circuit interrupter2015
Leakage current detection interrupter plug having detachable connect terminals2014
Memory array of non-volatile electrically alterable memory cells for storing mul2010
Method for manufacturing a non-volatile electrically alterable memory cell that 2009
Non-volatile electrically alterable memory cell and use thereof in multi-functio2008
Non-volatile electrically alterable semiconductor memory with control and floati2007
Transfer case with overdrive/underdrive shifting2007