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Home › CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same

CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same

US Patent 9935107 · Granted Apr 3, 2018

Estimated economic value: $16,515,000 ⓘ

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