Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same

Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same

US Patent 9691607 · Granted Jun 27, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Driving-assistance control apparatus2025
Driving support device2024
Driver posture measurement device and vehicle control device2023
Control device for an internal combustion engine2022
Epitaxial silicon carbide single crystal wafer and process for producing the sam2021
Epitaxial silicon carbide single crystal wafer and process for producing the sam2021
Method for evaluating quality of SiC single crystal body and method for producin2021
Controller which determines a misfire for an internal combustion engine2021
Epitaxial silicon carbide single crystal wafer and process for producing the sam2020
Epitaxial silicon carbide single crystal wafer and process for producing the sam2020
Method for producing silicon carbide single crystal and silicon carbide single c2020
Method for producing silicon carbide single crystal and silicon carbide single c2020