Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)

Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)

US Patent 9607834 · Granted Mar 28, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods and structures for increasing stability of soft or organic features2025
Patterning features with metal based resists2025
Double hardmasks for self-aligned multi-patterning processes2025
Double patterning method of patterning a substrate2025
Metal hard mask integration2025
Forming vias in a semiconductor device2025
Sacrificial capping layer for gate protection2025
In-situ focus ring coating2025
Variable hardness amorphous carbon mask2025
Plasma etching tools and systems2025
Method for patterning a substrate using photolithography2025
Pitch scaling in microfabrication2025