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Home › Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS

Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS

US Patent 9478411 · Granted Oct 25, 2016

Estimated economic value: $14,405,000 ⓘ

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