Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nanodot enhanced hybrid floating gate for non-volatile memory devices

Nanodot enhanced hybrid floating gate for non-volatile memory devices

US Patent 9331181 · Granted May 3, 2016

Estimated economic value: $7,737,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods for fabricating a 3-dimensional memory structure of nor memory strings2025
Three-dimensional memory device including laterally separated source lines and m2025
Three-dimensional memory structure fabricated using repeated active stack sectio2025
Silicon oxide nitride tunnel dielectric for a storage transistor in a 3-dimensio2025
Low power read method and a memory device capable thereof2025
Bonded semiconductor die assembly containing through-stack via structures and me2025
Three-dimensional memory structure fabrication using channel replacement2025
Cool electron erasing in thin-film storage transistors2024
Memory devices including different tier pitches, and related electronic systems2024
Three-dimensional memory string array of thin-film ferroelectric transistors2024
Three-dimensional memory string array of thin-film ferroelectric transistors2024
Preventing erase disturb in NAND2024