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Home › Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode

Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode

US Patent 8969916 · Granted Mar 3, 2015

Estimated economic value: $2,902,000 ⓘ

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