Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge

Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge

US Patent 8481404 · Granted Jul 9, 2013

Estimated economic value: $5,244,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Structures for a field-effect transistor that include a spacer structure2025
High voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG)2023
Transistor with phase transition material region between channel region and each2022
Co-integrated high voltage (HV) and medium voltage (MV) field effect transistors2022
FinFET having locally higher fin-to-fin pitch2021
FDSOI channel control by implanted high-k buried oxide2020
Three-dimensional transistor with improved channel mobility2019
Process for forming semiconductor layers of different thickness in FDSOI technol2018
FDSOI channel control by implanted high-K buried oxide2018
Method of forming a semiconductor device structure using differing spacer widths2018
Method of forming a semiconductor device structure using differing spacer widths2018
Semiconductor structure including a transistor having stress creating regions an2017